Performance improvement and evaluation of an all plastic organic field effect transistor

Shizuyasu Ochia,, Wang, Xin, Rajesh, Narayana Perumal, Ohashi, Asao, Kojima, Kenzo and Mizutani, Teruyoshi (2007). Performance improvement and evaluation of an all plastic organic field effect transistor. In: Zhenan Bao and David J. Gundlach, Proceedings of SPIE: Organic Field-Effect Transistors VI. Organic Field-Effect Transistors VI, San Diego, CA, (665816-1-665816-11). 26th Aug 2007. doi:10.1117/12.732280

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Author Shizuyasu Ochia,
Wang, Xin
Rajesh, Narayana Perumal
Ohashi, Asao
Kojima, Kenzo
Mizutani, Teruyoshi
Title of paper Performance improvement and evaluation of an all plastic organic field effect transistor
Conference name Organic Field-Effect Transistors VI
Conference location San Diego, CA
Conference dates 26th Aug 2007
Proceedings title Proceedings of SPIE: Organic Field-Effect Transistors VI   Check publisher's open access policy
Journal name Organic Field-Effect Transistors VI   Check publisher's open access policy
Place of Publication Washington, D.C.
Publisher SPIE
Publication Year 2007
Sub-type Fully published paper
DOI 10.1117/12.732280
Open Access Status File (Publisher version)
ISBN 9780819468062
0819468061
ISSN 0277-786X
Editor Zhenan Bao
David J. Gundlach
Volume 6658
Start page 665816-1
End page 665816-11
Total pages 11
Language eng
Abstract/Summary We have fabricated organic thin film transistors with a polyehylenenaphthalate (PEN) film as the substrate, a poly (3- hexylthiophene) (P3HT) thin film as the semiconductor layer and a cross-linked poly-4-vinylphenol (PVP) thin film as the gate dielectric layer. The performance of the P3HT-FET, fabricated using the spin-coated P3HT thin film, is as follows. The mobility is 4.0×10-4cm2/Vs and the threshold voltage is -13V. On the other hand, P3HT-FET fabricated using the drop-cast thin film is as follows. The mobility is 2.0×10-2cm2/Vs and the threshold voltage is -2V. Furthermore, the performances of the top and bottom contact P3HT-FETs were also evaluated as part of investigations into the charge injection from electrodes to the P3HT thin film and the interface traps between the P3HT thin film and electrodes. In terms of the performance of top contact P3HT-FET, the mobility is 7.0×10-2 cm2/Vs and the threshold voltage is 5V, which are values far superior to those of the bottom contact P3HT-FET. This indicates that in the top contact P3HT-FET, the contact resistance of the interface between the P3HT thin film and electrode is lower than that of the bottom contact P3HT-FET.
Subjects 0204 Condensed Matter Physics
Keyword organic thin film transistor
poly(3-hexylthiophene) [P3HT]
poly-4-vinylphenol (PVP)
cast-film
top and bottom contact structures
Q-Index Code EX

Document type: Conference Paper
Collection: School of Mathematics and Physics
 
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Created: Tue, 06 Jul 2010, 14:42:36 EST by Thelma Whitbourne on behalf of Faculty of Science