Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junction

Rizwan, S, Guo, SM, Wang, Y, Wen, ZC, Zhang, S, Zhao, YG, Zou, J and Han, XF (2010) Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junction. IEEE Transactions on Magnetics, 46 6: 2383-2386. doi:10.1109/TMAG.2010.2045743


Author Rizwan, S
Guo, SM
Wang, Y
Wen, ZC
Zhang, S
Zhao, YG
Zou, J
Han, XF
Title Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junction
Journal name IEEE Transactions on Magnetics   Check publisher's open access policy
ISSN 0018-9464
1941-0069
Publication date 2010-06
Sub-type Article (original research)
DOI 10.1109/TMAG.2010.2045743
Volume 46
Issue 6
Start page 2383
End page 2386
Total pages 4
Place of publication Piscataway, NJ, United States
Publisher IEEE
Collection year 2011
Language eng
Formatted abstract
We have observed the transport properties in magnetic tunnel junction with the multilayered structure: La0.67Sr0.33MnO3 (50 nm)/Al-O (1 nm)/CoFeB (5 nm)/Ta (10 nm)/Ru (10 nm). The maximum normal tunneling magnetoresistance (TMR) ratio was found to be 12.4% at a temperature range around 100 K, and the maximum inverse TMR ratio was observed to be ∼3% at a temperature of 5 K. The inverse TMR decreases with increasing temperature until it reaches a temperature range of around 50 K, whereby it switches to the normal TMR behavior. The appearance of inverse TMR at low temperatures is attributed to the presence of minority-spin density of states (DOS) of half-metal La0.67Sr0.33MnO3 around the Fermi level present at the half-metal-insulator interface. The vanishing of inverse TMR and increase of normal TMR above certain temperature range is due to no contribution from the minority-spin DOS in the tunneling process. These results were found to be reproducible and the TMR ratio of more than 3% and 11% was obtained at room temperature before and after annealing at a temperature of 235 K for an annealing time of one hour, respectively. © 2006 IEEE.
Keyword Half-metal LSMO
Inverse tunneling magnetoresistance (TMR)
Magnetic tunnel junction (MTJ)
Minority-spin density of states (DOS)
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 5467617

 
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Created: Sun, 13 Jun 2010, 00:05:16 EST