Wurtzite P-doped GaN triangular microtubes as field emitters

Fu, Lu-Tang, Chen, Zhi-Gang, Wang, Da-Wei, Cheng, Lina, Xu, Hong-Yi, Liu, Ji-Zi, Cong, Hong-Tao, Lu, Gao Qing (Max) and Zou, Jin (2010) Wurtzite P-doped GaN triangular microtubes as field emitters. The Journal of Physical Chemistry Part C: Nanomaterials, Interfaces and Hard Matter, 114 21: 9627-9633. doi:10.1021/jp100689s


Author Fu, Lu-Tang
Chen, Zhi-Gang
Wang, Da-Wei
Cheng, Lina
Xu, Hong-Yi
Liu, Ji-Zi
Cong, Hong-Tao
Lu, Gao Qing (Max)
Zou, Jin
Title Wurtzite P-doped GaN triangular microtubes as field emitters
Journal name The Journal of Physical Chemistry Part C: Nanomaterials, Interfaces and Hard Matter   Check publisher's open access policy
ISSN 1932-7447
1932-7455
Publication date 2010-06-03
Sub-type Article (original research)
DOI 10.1021/jp100689s
Volume 114
Issue 21
Start page 9627
End page 9633
Total pages 7
Editor George C. Schatz
Place of publication Washington, DC, U.S.A.
Publisher American Chemical Society
Collection year 2011
Language eng
Formatted abstract
Novel P-doped GaN triangular microtubes were synthesized by a facile chemical vapor deposition method. This novel structure consists of a single hexagonal wurtzite phase with a triangular cross section. The tube lengths range from tens of to several hundred micrometers, and each side has a width between 0.5 and 1 μm, with a tube wall thickness of several tens of nanometers. The formation mechanism of this triangular tubular structure is a vapor-solid methanism, as determined by electron microscopy. Extraordinary and stable infrared emission (centered at ∼724 nm) from the P-doped GaN triangular microtubes was observed from their photoluminescence spectroscopy. The low turn-on field (2.9 V μm−1), high field-enhancement factor, large current density (3 mA cm−2 at a field of ∼9.5 V μm −1), and high stability indicate the suitability of P-doped GaN microtubes as potential field emitters. This field emission property is attributed to the specific crystallographic feature—the rigid triangular structures with effective P doping and rough surface hillocks.
© 2010 American Chemical Society.
Keyword Gallium nitride nanowires
Vapor-phase epitaxy
Emission properties
Optical-properties
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Sun, 13 Jun 2010, 00:03:53 EST