Non-CA resists for 193nm immersions lithography: Effects of chemical structure on sensitivity

Blakey, Idriss, Chen, Lan, Goh, Yong Keng, Lawrie, Kirsten Jean, Chuang, Ya-mi, Piscani, Emil, Zimmerman, Paul A. and Whittaker, Andrew K. (2009). Non-CA resists for 193nm immersions lithography: Effects of chemical structure on sensitivity. In: Ron C. Driggers and Karolyn Labes, Proceedings of SPIE. Advances in Resist Materials and Processing Technology XXVI, San Jose, CA, USA, (72733X.1-72733X.9). 23 February, 2009. doi:10.1117/12.814076

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Author Blakey, Idriss
Chen, Lan
Goh, Yong Keng
Lawrie, Kirsten Jean
Chuang, Ya-mi
Piscani, Emil
Zimmerman, Paul A.
Whittaker, Andrew K.
Title of paper Non-CA resists for 193nm immersions lithography: Effects of chemical structure on sensitivity
Conference name Advances in Resist Materials and Processing Technology XXVI
Conference location San Jose, CA, USA
Conference dates 23 February, 2009
Proceedings title Proceedings of SPIE   Check publisher's open access policy
Journal name Advances in Resist Materials and Processing Technology Xxvi   Check publisher's open access policy
Place of Publication Bellingham, WA, United States
Publisher SPIE - International Society for Optical Engineering
Publication Year 2009
Year available 2009
Sub-type Fully published paper
DOI 10.1117/12.814076
Open Access Status File (Publisher version)
ISBN 9780819475268
ISSN 0091-3286
Editor Ron C. Driggers
Karolyn Labes
Volume 7273
Start page 72733X.1
End page 72733X.9
Total pages 9
Collection year 2010
Language eng
Abstract/Summary Initial studies are presented on the use of polysulfones as non-chemically amplified resists (non-CARs) for 193 nm immersion lithography. Polynorbornene sulfone films on silicon wafers have been irradiated with 193 nm photons in the absence of a photo-acid generator. Chemical contrast curves and contrast curves were obtained via spectroscopic ellipsometry and grazing angle - attenuated total reflectance FTIR spectroscopy. Results were consistent with previously reported mechanisms for the degradation of aliphatic polysulfones with ionizing radiation. It was shown that E0 values could be reduced significantly by using a post exposure bake step, which propagated depolymerization of the polymer. Initial patterning results down to 50 nm half pitch were demonstrated with EUV photons.
Keyword Non-chemically amplified resists
Non-CAR
193 nm immersion lithography
Polysulfone
Q-Index Code E1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Wed, 14 Apr 2010, 15:24:17 EST by Sandrine Ducrot on behalf of Aust Institute for Bioengineering & Nanotechnology