Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires

Montazeri, Mohammad, Fickenscher, Melodie, Smith, Leigh M., Jackson, Howard E., Yarrison-Rice, Jan, Kang, Jung Hyun, Gao, Qiang, Tan, H. Hoe, Jagadish, Chennupati, Guo, Yanan, Zou, Jin, Pistol, Mats-Erik and Pryor, Craig E. (2010) Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires. Nano Letters, 10 3: 880-886. doi:10.1021/nl903547r


Author Montazeri, Mohammad
Fickenscher, Melodie
Smith, Leigh M.
Jackson, Howard E.
Yarrison-Rice, Jan
Kang, Jung Hyun
Gao, Qiang
Tan, H. Hoe
Jagadish, Chennupati
Guo, Yanan
Zou, Jin
Pistol, Mats-Erik
Pryor, Craig E.
Title Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires
Journal name Nano Letters   Check publisher's open access policy
ISSN 1530-6984
Publication date 2010-03
Year available 2011
Sub-type Article (original research)
DOI 10.1021/nl903547r
Volume 10
Issue 3
Start page 880
End page 886
Total pages 7
Place of publication Columbus, Ohio, USA
Publisher American Chemical Society
Collection year 2011
Language eng
Formatted abstract
Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.
© 2010 American Chemical Society.
Keyword Strained nanowires
Core-shell nanowires
Photoluminescence
Raman
Silicon Nanowires
Quantum dots
Growth
Semiconductors
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Publication Date (Web): February 4, 2010

 
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Created: Sun, 21 Mar 2010, 00:02:19 EST