Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques

Yuan, X. L., Sekiguchi, T., Ri, S. G. and Ito, S. (2004). Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques. In: Jean-Pierre Landesman and Paul C. Montgomery, European Physical Journal Applied Physics. Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X), Batz-sur-Mer, France, (337-339). 29 September - 2 October, 2003. doi:10.1051/epjap:2004119-7


Author Yuan, X. L.
Sekiguchi, T.
Ri, S. G.
Ito, S.
Title of paper Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques
Conference name Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
Conference location Batz-sur-Mer, France
Conference dates 29 September - 2 October, 2003
Proceedings title European Physical Journal Applied Physics   Check publisher's open access policy
Journal name European Physical Journal-Applied Physics   Check publisher's open access policy
Place of Publication Paris, France
Publisher EDP Sciences
Publication Year 2004
Sub-type Fully published paper
DOI 10.1051/epjap:2004119-7
Open Access Status Not Open Access
ISSN 1286-0042
1286-0050
Editor Jean-Pierre Landesman
Paul C. Montgomery
Volume 27
Issue 1-3
Start page 337
End page 339
Total pages 3
Language eng
Abstract/Summary We have characterized threading dislocations (TDs) and misfit dislocations (MDs) in a degraded strained-Si/SiGe heterostructure by using electron beam induced current (EBIC), transmission electron microscopy (TEM) and chemical etching techniques. The strained-Si layer in this degraded heterostructure was selected to be thicker than the critical thickness for introducing MDs at the interface of strained-Si/SiGe. Cross-sectional TEM image reveals that there are dense dislocation network in deep region (graded SiGe layer) and 60° MDs at the upper interface (strained-Si/SiGe interface). The EBIC image taken with a 20 keV electron beam reveals the cross-hatch pattern of MD network in the deep graded SiGe region. The EBIC image taken with a 4 keV electron beam at 65 K shows weak dark spots and two perpendicular sets of weak dark lines, corresponded to TDs and MDs at the upper interface, respectively. Comparison with chemical etching results indicates that the weak dark lines in EBIC image correspond to MD bundles/groups at the upper interface. The electrical activities of these dislocations are discussed by using the temperature dependence of EBIC contrast.
Q-Index Code E1

 
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Created: Fri, 05 Mar 2010, 13:18:40 EST by Ms Lynette Adams on behalf of Julius Kruttschnitt Mineral Research Centre