Uniform Mg2Si semiconductor thin films epitaxially grown on Si substrate

Wang, Y., Zou, J., Wang, X. N., Mei, Z. X., Du, X. L., Xue, Q. K., Jia, J. F., Zhang, X. N. and Zhang, Z. (2007). Uniform Mg2Si semiconductor thin films epitaxially grown on Si substrate. In: Proceedings of ARNAM 2007 Annual Workshop. Australian Research for Advanced Materials (ARNAM ) 2007 Annual Workshop, Kioloa, Australia, (). 8-11 July 2007.


Author Wang, Y.
Zou, J.
Wang, X. N.
Mei, Z. X.
Du, X. L.
Xue, Q. K.
Jia, J. F.
Zhang, X. N.
Zhang, Z.
Title of paper Uniform Mg2Si semiconductor thin films epitaxially grown on Si substrate
Conference name Australian Research for Advanced Materials (ARNAM ) 2007 Annual Workshop
Conference location Kioloa, Australia
Conference dates 8-11 July 2007
Proceedings title Proceedings of ARNAM 2007 Annual Workshop
Publication Year 2007
Sub-type Oral presentation
Language eng
Formatted Abstract/Summary
Magnesium deposit on (111) Si substrate by molecular beam epitaxy has been investigated in detail by
transmission electron microscopy. Despite a large difference in lattice constant, a single crystalline Mg2Si
layer up to 4nm is still observed to form on Si substrate. Moreover, the thin layer shows a new and perfect
epitaxial relationship with Si, which is found to be Si (111)//Mg2Si (110), Si <1-10>//Mg2Si <1-10>. The
mechanism of such epitaxial growth is discussed and the corresponding atomic model is also proposed.
The work opens the door to obtain high quality Mg2Si thin films for infrared optoelectronics and Ohmic
contact of n-type Si.
Subjects 0913 Mechanical Engineering
0912 Materials Engineering
Q-Index Code EX
Q-Index Status Provisional Code
Institutional Status Unknown
Additional Notes Session 5: paper 4. Meeting abstract number: 05-4

 
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