Metal nanodot memory by self-assembled block copolymer lift-off

Hong, Augustin J., Liu, Chi-Chun, Wang, Yong, Kim, Jiyoung, Xiu, Faxian, Ji, Shengxiang, Zou, Jin, Nealey, Paul F. and Wang, Kang L. (2010) Metal nanodot memory by self-assembled block copolymer lift-off. NANO Letters, 10 1: 224-229. doi:10.1021/nl903340a

Author Hong, Augustin J.
Liu, Chi-Chun
Wang, Yong
Kim, Jiyoung
Xiu, Faxian
Ji, Shengxiang
Zou, Jin
Nealey, Paul F.
Wang, Kang L.
Title Metal nanodot memory by self-assembled block copolymer lift-off
Journal name NANO Letters   Check publisher's open access policy
ISSN 1530-6984
Publication date 2010-01
Year available 2009
Sub-type Article (original research)
DOI 10.1021/nl903340a
Volume 10
Issue 1
Start page 224
End page 229
Total pages 6
Editor A. Paul Alivisatos
Place of publication Columbus, Ohio, USA
Publisher American Chemical Society
Collection year 2010
Language eng
Subject C1
091405 Mining Engineering
970109 Expanding Knowledge in Engineering
Abstract As information technology demands for larger capability in data storage continue, ultrahigh bit density memory devices have been extensively investigated. To produce an ultrahigh bit density memory device, multilevel cell operations that require several states in one cell have been proposed as one solution, which can also alleviate the scaling issues in the current state-of-the-art complementary metal oxide semiconductor technology. Here, we report the first demonstration of metal nanodot memory using a self-assembled block copolymer lift-off. This metal nanodot memory with simple low temperature processes produced an ultrawide memory window of 15 V at the ±18 V voltage sweep. Such a large window can be adopted for multilevel cell operations. Scanning electron microscopy and transmission electron microscopy studies showed a periodic metal nanodot array with uniform distribution defined by the block copolymer pattern. Consequently, this metal nanodot memory has high potential to reduce the variability issues that metal nanocrystal memories previously had and multilevel cells with ultrawide memory windows can be fabricated with high reliability and manufacturability.
Keyword Flash memory
Block copolymer
Metal nanodot
Q-Index Code C1
Q-Index Status Confirmed Code

Document type: Journal Article
Sub-type: Article (original research)
Collections: 2010 Higher Education Research Data Collection
School of Mechanical & Mining Engineering Publications
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Created: Sun, 24 Jan 2010, 00:01:08 EST