Registration of single quantum dots using cryogenic laser photolithography

Lee, Kwan H., Green, Alex M., Taylor, Robert A., Sharp, David N., Scrimgeour, Jan, Roche, Olivia M., Na, Jong H., Jarjour, Anas F., Turberfield, Andrew J., Brossard, Frederic S. F., Williams, David A. and Briggs, G. Andrew D. (2006) Registration of single quantum dots using cryogenic laser photolithography. Applied Physics Letters, 88 19: 193106-193106-3. doi:10.1063/1.2202193

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Author Lee, Kwan H.
Green, Alex M.
Taylor, Robert A.
Sharp, David N.
Scrimgeour, Jan
Roche, Olivia M.
Na, Jong H.
Jarjour, Anas F.
Turberfield, Andrew J.
Brossard, Frederic S. F.
Williams, David A.
Briggs, G. Andrew D.
Title Registration of single quantum dots using cryogenic laser photolithography
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2006-05-09
Sub-type Article (original research)
DOI 10.1063/1.2202193
Open Access Status File (Publisher version)
Volume 88
Issue 19
Start page 193106
End page 193106-3
Total pages 3
Editor Nghi Q. Lam
Place of publication Melville, N.Y., U. S. A.
Publisher American Institute of Physics
Language eng
Subject 02 Physical Sciences
0915 Interdisciplinary Engineering
Formatted abstract
We have registered the position of single InGaAs quantum dots using a cryogenic laser photolithography technique. This is an important advance towards the reproducible fabrication of solid-state cavity quantum electrodynamic devices, a key requirement for commercial exploitation of quantum information processing. The quantum dot positions were registered with an estimated accuracy of 50 nm by fabricating metal alignment markers around them. Photoluminescence spectra from quantum dots before and after marker fabrication were identical except for a small redshift (~1 nm), probably introduced during the reactive ion etching.
© 2006 American Institute of Physics
Keyword Semiconductor quantum dots
Indium compounds
Gallium arsenide
III-V semiconductors
Laser materials processing
Quantum computing
Red shift
Sputter etching
Indium gallium arsenide
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collections: Excellence in Research Australia (ERA) - Collection
School of Mathematics and Physics
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Citation counts: TR Web of Science Citation Count  Cited 16 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 15 times in Scopus Article | Citations
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Created: Fri, 22 Jan 2010, 09:57:58 EST by Jon Swabey on behalf of Faculty of Science