Accuracy of single quantum dot registration using cryogenic laser photolithography

Lee, K. H., Green, A. M., Brossard, F. S. F., Taylor, R. A., Sharp, D. N., Turberfield, A. J., Williams, D. A. and Briggs, G. A. D. (2006). Accuracy of single quantum dot registration using cryogenic laser photolithography. In: Sixth IEEE Conference on Nanotechnology, IEEE-NANO 2006. 6th IEEE conference on Nanotechnology, Cincinnati, Ohio, USA, (723-726). 17-20 Jun 2006.


Author Lee, K. H.
Green, A. M.
Brossard, F. S. F.
Taylor, R. A.
Sharp, D. N.
Turberfield, A. J.
Williams, D. A.
Briggs, G. A. D.
Title of paper Accuracy of single quantum dot registration using cryogenic laser photolithography
Conference name 6th IEEE conference on Nanotechnology
Conference location Cincinnati, Ohio, USA
Conference dates 17-20 Jun 2006
Proceedings title Sixth IEEE Conference on Nanotechnology, IEEE-NANO 2006
Place of Publication New York, USA
Publisher IEEE
Publication Year 2006
Sub-type Fully published paper
ISBN 1-4244-0077-5
Volume 2
Start page 723
End page 726
Total pages 4
Language eng
Abstract/Summary We have registered the position of single InGaAs quantum dots using a novel cryogenic laser photolithography technique. This would be useful in realizing solid state cavity quantum electrodynamics. By fabricating metal alignment markers around the quantum dot, it was registered with an accuracy of 50 nm. Following the marker fabrication process we demonstrated that the same quantum dot was reacquired, with an accuracy of 150 nm. The photoluminescence spectra from the quantum dots before and after processing were identical except for a small red shift (~1 nm), probably introduced during the reactive ion etching.
Subjects 1007 Nanotechnology
Keyword Nanotechnology
Photoluminescence
Quantum effect semiconductor devices
Q-Index Code EX

 
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Created: Thu, 21 Jan 2010, 11:41:15 EST by Thelma Whitbourne on behalf of Faculty of Science