Production and recovery of defects in phosphorus-implanted ZnO

Chen, Z. Q., Kawasuso, A., Xu, Y., Naramoto, H., Yuan, X. L., Sekiguchi, T., Suzuki, R. and Ohdaira, T. (2005) Production and recovery of defects in phosphorus-implanted ZnO. Journal of Applied Physics, 97 1: 013528-1-013528-6. doi:10.1063/1.1821636

Attached Files (Some files may be inaccessible until you login with your UQ eSpace credentials)
Name Description MIMEType Size Downloads
UQ192997_OA.pdf Full text (open access) application/pdf 432.53KB 0

Author Chen, Z. Q.
Kawasuso, A.
Xu, Y.
Naramoto, H.
Yuan, X. L.
Sekiguchi, T.
Suzuki, R.
Ohdaira, T.
Title Production and recovery of defects in phosphorus-implanted ZnO
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
Publication date 2005
Year available 2005
Sub-type Article (original research)
DOI 10.1063/1.1821636
Open Access Status File (Publisher version)
Volume 97
Issue 1
Start page 013528-1
End page 013528-6
Total pages 6
Place of publication Melville, NY, U.S.
Publisher American Institute of Physics
Language eng
Subject 0403 Geology
040306 Mineralogy and Crystallography
Abstract Phosphorus ions were implanted in ZnO single crystals with energies of 50–380 keV having total doses of 4.231013–4.231015 cm−2. Positron annihilation measurements reveal the introduction of vacancy clusters after implantation. These vacancy clusters grow to a larger size after annealing at a temperature of 600 °C. Upon further annealing up to a temperature of 1100 °C, the vacancy clusters gradually disappear. Raman-scattering measurements reveal the enhancement of the phonon mode at approximately 575 cm−1 after P+ implantation, which is induced by the production of oxygen vacancies sVOd. These oxygen vacancies are annealed out up to a temperature of 700 °C accompanying the agglomeration of vacancy clusters. The light emissions of ZnO are suppressed after implantation. This is due to the competing nonradiative recombination centers introduced by implantation. The recovery of the light emission occurs at temperatures above 600 °C. The vacancy-type defects detected by positrons might be part of the nonradiative recombination centers. The Hall measurement indicates an n-type conductivity for the P+-implanted ZnO layer, suggesting that phosphorus is an amphoteric dopant.
Keyword Phosphorus
ions
ZnO
Crystals
Implant
Q-Index Code C1

Document type: Journal Article
Sub-type: Article (original research)
Collections: Julius Kruttschnitt Mineral Research Centre Publications
Excellence in Research Australia (ERA) - Collection
 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 112 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 107 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Created: Mon, 18 Jan 2010, 11:50:31 EST by Macushla Boyle on behalf of Sustainable Minerals Institute