Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique

Yuan, X. L., Sekiguchi, T., Ri, S. G. and Ito, S. (2004) Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique. Applied Physics Letters, 84 17: 3316-3318.


Author Yuan, X. L.
Sekiguchi, T.
Ri, S. G.
Ito, S.
Title Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique
Journal name Applied Physics Letters  (ERA 2012 Listed)    (ERA 2010 Rank A*)   Check publisher's open access policy
Publication date 2004-04-26
Sub-type Article
Year available 2004
DOI 10.1063/1.1734688
Volume number 84
Issue number 17
ISSN 0003-6951
Start page 3316
End page 3318
Total pages 3
Place of publication Melville, N.Y.
Publisher American Institute of Physics
Language eng
Subject 0403 Geology
040306 Mineralogy and Crystallography
1099 Other Technology
Abstract Electron-beam-induced current(EBIC) has been employed to investigate misfit dislocations (MDs) at the interface of strained Si/Si0.8Ge0.2 , which are located within the depletion region of Schottky contact. The MDs are intentionally introduced by growing the strained-Si layer to a thickness larger than the critical thickness. Two orthogonal sets of weak dark lines and some weak dark dots are observed with low electron-beam energy at a low temperature. These dark lines and dark dots correspond to the MDs and threading dislocations (TDs), respectively. The MDs and TDs are found to be nearly electrically inactive at room temperature and increase their activities at lower temperature, indicating that they are accompanied by shallow levels and free from metallic contamination. Comparisons with the chemical etched pattern reveal that each of the EBIC dark lines corresponds to a bundle of MDs.
Keyword Electron-beam-induced current (EBIC)
Misfit dislocations
Technique
Current
Si/Si0.8Ge0.2
Q-Index Code C1

 
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