Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2

Yuan, X. L., Sekiguchi, T., Niitsuma, J., Sakuma, Y., Ito, S. and Ri, S. G. (2005) Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2. Applied Physics Letters, 86 16: 162102-1-162102-3.


Author Yuan, X. L.
Sekiguchi, T.
Niitsuma, J.
Sakuma, Y.
Ito, S.
Ri, S. G.
Title Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2
Formatted title Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2
Journal name Applied Physics Letters  (ERA 2012 Listed)    (ERA 2010 Rank A*)   Check publisher's open access policy
Publication date 2005-04
Sub-type Article
DOI 10.1063/1.1905802
Volume number 86
Issue number 16
ISSN 0003-6951
1077-3118
Start page 162102-1
End page 162102-3
Total pages 3
Place of publication Melville, NY, United States
Publisher American Institute of Physics
Language eng
Subject 0403 Geology
040306 Mineralogy and Crystallography
Abstract To improve the quality of a strained Si layer on a SiGe virtual substrate, the distribution of dislocations in a graded SiGe layer is characterized using electron beam induced current sEBICd. A crosshatch pattern of dark and bright bands running along the two k110l directions is observed in an EBIC image taken with a 25-keV-electron beam at 80 K. These dark and bright EBIC bands are attributed, respectively, to high- and low-density dislocation regions in the graded SiGe layer, as is confirmed by transmission electron microscopy. The effects of such an inhomogeneous dislocation distribution on the surface morphology and the generation of misfit dislocations sMDsd at the interface of strained Si/SiGe are investigated. Comparison between the EBIC image and an atomic force microscope image shows that the high-density dislocation regions are correlated with ridges on the surface topography. A chemical etching image shows that most of the MDs lie along the edges of surface ridges. Possible mechanisms of MD generation at the interface of the strained Si/SiGe are proposed.
Keyword SiGe
sEBICd
Electron beam
Surface morphology
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes Article number 162102

 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 5 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 5 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Access Statistics: 63 Abstract Views  -  Detailed Statistics
Created: Fri, 15 Jan 2010, 12:02:42 EST by Macushla Boyle on behalf of Sustainable Minerals Institute