Evolution of voids in Al+-implanted ZnO probed by a slow positron beam

Chen, Z. Q., Maekawa, M., Yamamoto, S., Kawasuso, A., Yuan, X. L., Sekiguchi, T., Suzuki, R. and Ohdaira, T. (2004) Evolution of voids in Al+-implanted ZnO probed by a slow positron beam. Physics Review B, 69 3: 035210-1-035210-10. doi:10.1103/PhysRevB.69.035210

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Author Chen, Z. Q.
Maekawa, M.
Yamamoto, S.
Kawasuso, A.
Yuan, X. L.
Sekiguchi, T.
Suzuki, R.
Ohdaira, T.
Title Evolution of voids in Al+-implanted ZnO probed by a slow positron beam
Journal name Physics Review B   Check publisher's open access policy
ISSN 1098-0121
Publication date 2004-01-29
Year available 2004
Sub-type Article (original research)
DOI 10.1103/PhysRevB.69.035210
Open Access Status File (Author Post-print)
Volume 69
Issue 3
Start page 035210-1
End page 035210-10
Total pages 10
Place of publication U. S.
Publisher American Physical Society
Language eng
Subject 0403 Geology
040306 Mineralogy and Crystallography
Abstract Undoped ZnO single crystals were implanted with aluminum ions up to a dose of 1015Al+/cm2. Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters, which are close to the size of V8, are generated by implantation. Postimplantation annealing shows that the Doppler broadening S parameter increases in the temperature range from 200°C to 600°C suggesting further agglomeration of vacancy clusters to voids. Detailed analyses of Doppler broadening spectra show formation of positronium after 600°C annealing of the implanted samples with doses higher than 1014Al+/cm2. Positron lifetime measurements further suggest that the void diameter is about 0.8 nm. The voids disappear and the vacancy concentration reaches the detection limit after annealing at 600–900°C. Hall measurement shows that the implanted Al+ ions are fully activated with improved carrier mobility after final annealing. Cathodoluminescence measurements show that the ultraviolet luminescence is much stronger than the unimplanted state. These findings also suggest that the electrical and optical properties of ZnO become much better by Al+ implantation and subsequent annealing.
Keyword Evaluation
Aluminum ions
Positron beams
Q-Index Code C1

Document type: Journal Article
Sub-type: Article (original research)
Collections: Julius Kruttschnitt Mineral Research Centre Publications
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Created: Fri, 15 Jan 2010, 11:33:51 EST by Macushla Boyle on behalf of Sustainable Minerals Institute