Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique

Chen, J., Yuan, X. L. and Sekiguchi, T. (2008) Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique. Scanning, 30 4: 347-353.


Author Chen, J.
Yuan, X. L.
Sekiguchi, T.
Title Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique
Journal name Scanning  (ERA 2012 Listed)    (ERA 2010 Rank C)   Check publisher's open access policy
Publication date 2008-07
Sub-type Article
DOI 10.1002/sca.20116
Volume number 30
Issue number 4
ISSN 0161-0457;1932-8745
Start page 347
End page 353
Total pages 7
Place of publication Malden MA, U.S.
Publisher John Wiley & Sons
Language eng
Subject 09 Engineering
0914 Resources Engineering and Extractive Metallurgy
Abstract We present advanced semiconductor diagnosis by using electron-beam-induced current (EBIC) technique. By varying the parameters such as temperature, accelerating voltage (Vacc), bias voltage, and stressing time, it is possible to extend EBIC application from conventional defect characterization to advanced device diagnosis. As an electron beam can excite a certain volume even beneath the surface passive layer, EBIC can be effectively employed to diagnose complicated devices with hybrid structure. Three topics were selected to demonstrate EBIC applications. First, the recombination activities of grain boundaries and their interaction with Fe impurity in photovoltaic multicrystalline Si (mc-Si) are clarified by temperature-dependent EBIC. Second, the detection of dislocations between strained-Si and SiGe virtual substrate are shown to overcome the limitation of depletion region. Third, the observation of leakage sites in high-k gate dielectric is demonstrated for the characterization of advanced hybrid device structures. SCANNING 30: 347-353, 2008. © 2008 Wiley Periodicals, Inc
Keyword Defect chemistry
Leakage
mc-Sc
Strained-Si
High-K
Q-Index Code C1

 
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Created: Thu, 14 Jan 2010, 09:34:27 EST by Rosalind Blair on behalf of Sustainable Minerals Institute