Parameter extraction for silicon-on-sapphire MOSFETs by using inverse modelling of capacitance measurements

Bertling, K., Domyo, H., Kim, Y.T., Ho, T., Rakic, A.D. and Yeow, Y-T (2008). Parameter extraction for silicon-on-sapphire MOSFETs by using inverse modelling of capacitance measurements. In: L. Faraone, M. Cortie, A. Cuevas, J. Dell and et. al., 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) Proceedings. 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), Sydney, Australia, (129-131). 28 July - 1 August, 2008.

Author Bertling, K.
Domyo, H.
Kim, Y.T.
Ho, T.
Rakic, A.D.
Yeow, Y-T
Title of paper Parameter extraction for silicon-on-sapphire MOSFETs by using inverse modelling of capacitance measurements
Conference name 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)
Conference location Sydney, Australia
Conference dates 28 July - 1 August, 2008
Proceedings title 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) Proceedings
Place of Publication Piscataway NJ USA
Publisher IEEE
Publication Year 2008
Sub-type Fully published paper
ISBN 978-1-4244-2717-8
Editor L. Faraone
M. Cortie
A. Cuevas
J. Dell
et. al.
Start page 129
End page 131
Total pages 4
Collection year 2009
Language eng
Subjects 090604 Microelectronics and Integrated Circuits
970109 Expanding Knowledge in Engineering
EX
Q-Index Code E1
Q-Index Status Provisional Code

 
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Created: Thu, 26 Nov 2009, 16:19:14 EST by Donna Clark on behalf of School of Information Technol and Elec Engineering