Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

Wang, L., Dimitrijev, S., Han, J.S., Iacopi, F. and Zou, J. (2009) Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3. JOURNAL OF CRYSTAL GROWTH, 311 19: 4442-4446. doi:10.1016/j.jcrysgro.2009.07.036


Author Wang, L.
Dimitrijev, S.
Han, J.S.
Iacopi, F.
Zou, J.
Title Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3
Formatted title
Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3
Journal name JOURNAL OF CRYSTAL GROWTH   Check publisher's open access policy
ISSN 0022-0248
Publication date 2009-09-15
Year available 2009
Sub-type Article (original research)
DOI 10.1016/j.jcrysgro.2009.07.036
Volume 311
Issue 19
Start page 4442
End page 4446
Total pages 5
Editor Kuech, T.F.
Place of publication Netherlands
Publisher Elsevier BV, North-Holland
Collection year 2010
Language eng
Subject C1
970102 Expanding Knowledge in the Physical Sciences
970109 Expanding Knowledge in Engineering
970110 Expanding Knowledge in Technology
091203 Compound Semiconductors
100708 Nanomaterials
100712 Nanoscale Characterisation
Keyword Crystal structure
X-ray diffraction
Chemical vapor deposition processes
Amorphous
Nanomaterials
Silicon carbide
CHEMICAL-VAPOR-DEPOSITION
STARVING PLASMA CONDITION
SILICON-CARBON ALLOYS
HYDROGEN-DILUTION
SOLAR-CELLS
FILMS
CARBIDE
METHYLSILANE
TEMPERATURE
GROWTH
Q-Index Code C1
Q-Index Status Confirmed Code

Document type: Journal Article
Sub-type: Article (original research)
Collections: 2010 Higher Education Research Data Collection
School of Mechanical & Mining Engineering Publications
 
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Created: Sun, 15 Nov 2009, 00:02:13 EST