Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications

Hong, Augustin J., Ogawa, Masaaki, Wang, Kang L., Wang, Yong, Zou, Jin, Xu, Zheng and Yang Yang (2008) Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications. Applied Physics Letters, 93 2: 023501.1-023501.3. doi:10.1063/1.2957476

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Author Hong, Augustin J.
Ogawa, Masaaki
Wang, Kang L.
Wang, Yong
Zou, Jin
Xu, Zheng
Yang Yang
Title Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications
Formatted title
Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2008-07-14
Year available 2008
Sub-type Article (original research)
DOI 10.1063/1.2957476
Open Access Status File (Publisher version)
Volume 93
Issue 2
Start page 023501.1
End page 023501.3
Total pages 3
Editor N. Q. Lam
Place of publication Melville, NY, United States
Publisher American Physical Society through the American Institute of Physics
Collection year 2009
Language eng
Subject C1
970102 Expanding Knowledge in the Physical Sciences
100708 Nanomaterials
Formatted abstract
A low temperature Al2O3/4 monolayer amorphous Si gate stack process was demonstrated on p-type Ge wafers using atomic layer deposition and molecular beam epitaxy. Multifrequency capacitance-voltage (C-V) and current-voltage (I-V) characteristics showed excellent electrical properties of the Pt/Al2O3/4 ML Si/Ge metal oxide semiconductor capacitor. No kinks from 1 MHz to 4 kHz and a leakage current density of 2.6×10−6 A/cm2 at 1 V with an equivalent oxide thickness of 2.5 nm. The interface characterization using a conductance method showed that interface trap density at the near midgap was 8×1012 eV−1 cm−2 and a mean capture cross section of holes was extracted to be 10−16 cm2.
Keyword Germanium
alumina
amorphous semiconductors
atomic layer deposition
dielectric materials
electrical conductivity
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article number 023501

Document type: Journal Article
Sub-type: Article (original research)
Collections: 2009 Higher Education Research Data Collection
School of Mechanical & Mining Engineering Publications
 
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Created: Fri, 20 Mar 2009, 00:36:46 EST by Sally Beard on behalf of Materials