双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用. Magnetoresistance effect of double barrier magnetic tunneling junction applied in spin transistors

曾中明 Zeng, Zhong-Ming, 韩秀峰 Han, Xiu-Feng, 杜关祥 Du, Guan-Xiang, 詹文山 Zhan, Wen-Shan, 王勇 Wang, Yong and 张泽 Zhang, Ze (2005) 双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用. Magnetoresistance effect of double barrier magnetic tunneling junction applied in spin transistors. Acta Physica Sinica, 54 7: 3351-3356.

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Author 曾中明 Zeng, Zhong-Ming
韩秀峰 Han, Xiu-Feng
杜关祥 Du, Guan-Xiang
詹文山 Zhan, Wen-Shan
王勇 Wang, Yong
张泽 Zhang, Ze
Title 双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用. Magnetoresistance effect of double barrier magnetic tunneling junction applied in spin transistors
Translated title Magnetoresistance effect of double barrier magnetic tunneling junction applied in spin transistors
Language of Title chi
eng
Journal name Acta Physica Sinica   Check publisher's open access policy
Translated journal name Acta Physica Sinica
Language of Journal Name chi
ISSN 1000-3290
1009-1963
1674-1056
1741-4199
Publication date 2005-07
Year available 2005
Sub-type Article (original research)
Volume 54
Issue 7
Start page 3351
End page 3356
Total pages 6
Place of publication Beijing, China
Publisher Zhongguo Wuli Xuehui
Language chi
eng
Subject 0204 Condensed Matter Physics
Formatted abstract
利用磁控濺射方法沉積雙勢壘磁性隧道結多層膜,其中Al-O勢壘層由等離子體氧化1nm厚的金屬鋁膜方式制備,然后采用深紫外光曝光和Ar離子刻蝕技術、微加工制備出長短軸分別為6和3 μm大小的橢圓形雙勢壘磁性隧道結(DBMTJ),并在室溫和低溫下對其自旋電子輸運特性進行了研究.DBMTJ 的隧穿磁電阻(TMR)比值在室溫和4.2 K分別達到27%和42.3%,結電阻分別為13.6 kΩ·μm2和17.5 kΩ·μm2,并在實驗中觀察到平行狀態下存在低電阻態及共振隧穿效應,反平行態下呈現高電阻態以及TMR隨外加偏壓或直流電流的增加而發生振蕩現象.由此,設計了一種基于這種雙勢壘磁性隧道結隧穿特性的自旋晶體管.

The multilayer films of the double-barrier magnetic tunneling junctions (DBMTJs) were deposited by magnetron sputtering. The AlOx insulator was formed by plasma oxidizing aluminium. The photolithographic pattering procedure combined with Ar ion milling was used to microfabricate the DBMTJs with an ellipse of π × 3 × 6 μm2. Magnetic transport properties of DBMTJs were investigated. The junctions show a resistance-area product about 13.6 kΩ · μm2 and 17.5 kΩ · μm2, a high tunneling magnetoresistance of 27% and 42.2% at 300 K and 4.2 K, respectively. A tunneling magnetoresistance oscillation phenomenon with respect to the bias voltage was first observed in this experiment. We designed a few kind of spin transistors based on the spin-dependent resonant tunneling effect of the DBMTJs.

The use of electron holography microsurgical methods of study, from both theoretical and experimental systematic study of magnetic tunnel junction barrier layer inner potential distribution, pointing out that a number of experiments at the course of the experiment should be attention to the phenomenon and put forward possible solutions.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes 3351 paper number.

Document type: Journal Article
Sub-type: Article (original research)
Collections: Excellence in Research Australia (ERA) - Collection
School of Mechanical & Mining Engineering Publications
ERA 2012 Admin Only
 
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Created: Wed, 04 Mar 2009, 15:23:15 EST by Gina Velli on behalf of School of Mechanical and Mining Engineering