Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors

Songa, Hong-Qiang, Wang, Yong, Yanb, Shi-Shen, Meib, Liang-Mo and Zhangd, Ze (2007) Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors. Journal of Magnetism and Magnetic Materials, 312 1: 53-57. doi:10.1016/j.jmmm.2006.09.008


Author Songa, Hong-Qiang
Wang, Yong
Yanb, Shi-Shen
Meib, Liang-Mo
Zhangd, Ze
Title Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors
Journal name Journal of Magnetism and Magnetic Materials   Check publisher's open access policy
ISSN 0304-8853
Publication date 2007-05
Sub-type Article (original research)
DOI 10.1016/j.jmmm.2006.09.008
Volume 312
Issue 1
Start page 53
End page 57
Total pages 5
Place of publication Amsterdam, Holland
Publisher Elsevier B.V.
Language eng
Subject 0204 Condensed Matter Physics
Abstract TiO2:Co thin films of high Co concentration were investigated by the high resolution transmission electron microscopy, physical property measurement system and energy dispersive X-ray. The as-deposited films are amorphous magnetic semiconductors and we did not find any Co metal particles in them. The electronic transport process in the low-temperature range below 80 K could be described by the spin-dependent variable-range-hopping process. However, after the samples were annealed at 300 °C, large amounts of Co metal particles were observed to connect each other and the films show a metallic behavior. The origin of ferromagnetism of the thin films is also discussed.r 2006 Elsevier B.V. All rights reserved.
Formatted abstract
TiO2:Co thin films of high Co concentration were investigated by the high resolution transmission electron microscopy, physical property measurement system and energy dispersive X-ray. The as-deposited films are amorphous magnetic semiconductors and we did not find any Co metal particles in them. The electronic transport process in the low-temperature range below 80 K could be described by the spin-dependent variable-range-hopping process. However, after the samples were annealed at 300 °C, large amounts of Co metal particles were observed to connect each other and the films show a metallic behavior. The origin of ferromagnetism of the thin films is also discussed.r 2006 Elsevier B.V. All rights reserved.
Keyword TiO2:Co thin film
Magnetic semiconductor
Transport properties
Microstructure
Q-Index Code C1

 
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