Controlled Growth of Zn-polar Zn0 Epitaxial Film by Nitridation of Sapphire Substrate

Mei, Z. X., Du, X. L., Wang, Y., Ying, M. J., Zeng, Z. Q., Zheng, H., Jia, J. F., Zhang, Z. and Xue, Q. K. (2005) Controlled Growth of Zn-polar Zn0 Epitaxial Film by Nitridation of Sapphire Substrate. Applied Physics Letters, 86 11: 112111.1-112111.3. doi:10.1063/1.1884266

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Author Mei, Z. X.
Du, X. L.
Wang, Y.
Ying, M. J.
Zeng, Z. Q.
Zheng, H.
Jia, J. F.
Zhang, Z.
Xue, Q. K.
Title Controlled Growth of Zn-polar Zn0 Epitaxial Film by Nitridation of Sapphire Substrate
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2005-03-14
Year available 2005
Sub-type Article (original research)
DOI 10.1063/1.1884266
Open Access Status File (Publisher version)
Volume 86
Issue 11
Start page 112111.1
End page 112111.3
Total pages 3
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Abstract Surface nitridation is used to eliminate O-polar inversion domains and control the growth of single-domain Zn-polar ZnO film on sapphire (0001) substrate by rf-plasma-assisted molecular-beam epitaxy. It is found that the nitridation temperature is crucial for achieving quality AlN buffer layers and ZnO films with cation polarity, as demonstrated by ex situ transmission electron microscopy. Under optimal growth conditions, a 4×4 surface reconstruction was observed, which is confirmed to be a characteristic surface structure of the Zn-polar films, and can be used as a fingerprint to optimize the ZnO growth.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes Article # 112111

Document type: Journal Article
Sub-type: Article (original research)
Collections: Excellence in Research Australia (ERA) - Collection
School of Mechanical & Mining Engineering Publications
 
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