Bias Voltage and Temperature Dependence of Magneto-electric Properties in Double-barrier Magnetic Tunnel Junction with Amorphous Co-Fe-B Electrodes

Zeng, Z. M., Wang, Y., Han, X. F., Zhan, W. S. and Zhang, Z. (2006) Bias Voltage and Temperature Dependence of Magneto-electric Properties in Double-barrier Magnetic Tunnel Junction with Amorphous Co-Fe-B Electrodes. The European Physical Journal B - Condensed Matter and Complex Systems, 52 2: 205-208.


Author Zeng, Z. M.
Wang, Y.
Han, X. F.
Zhan, W. S.
Zhang, Z.
Title Bias Voltage and Temperature Dependence of Magneto-electric Properties in Double-barrier Magnetic Tunnel Junction with Amorphous Co-Fe-B Electrodes
Journal name The European Physical Journal B - Condensed Matter and Complex Systems  (ERA 2012 Listed)    (ERA 2010 Rank A)   Check publisher's open access policy
Publication date 2006
Sub-type Article
DOI 10.1140/epjb/e2006-00291-9
Volume number 52
Issue number 2
ISSN 1434-6028; 1434-6036
Start page 205
End page 208
Total pages 4
Place of publication Berlin
Publisher Springer-Verlag
Language eng
Subject 0204 Condensed Matter Physics
Abstract Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junctions(DBMTJs) with a structure of [IrMn/CoFe/Ru/CoFeB]/Al-O/CoFeB/Al-O/[CoFeB/Ru/CoFe/IrMn], have been investigated. The DBMTJs show a large tunnel magnetoresistance (TMR) ratio of up to 57.6%, a high V1/2 value of 1.26 V and small switching field Hc of 9.5 Oe at room temperature (RT). The TMR reaches the maximum at 30 K, about 89.0%, and decreases slightly from 30 to 4.2 K. A novel zero-bias anomaly (ZBA) in the P state is found and is temperature dependent, more sharply at low temperature, whereas a normal ZBA exists in the AP state. These effects are ascribed to magnon-, phonon- and impurity-assisted tunneling, and variation of density of states. The DBMTJ with a large TMR ratio, a high V1/2, and small switching field Hc is promising for developing the future spin electronic devices
Q-Index Code C1

 
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