Synthesis of high-refractive index sulfur containing polymers for 193-nm immersion lithography: A progress report

Blakey, I, Conley, W, George, GA, Hill, DJT, Liu, HP, Rasoul, F and Whittaker, AK (2006). Synthesis of high-refractive index sulfur containing polymers for 193-nm immersion lithography: A progress report. In: Proceedings of SPIE 2006. Advances in Resist Technology and Processing XXIII, San Jose, CA, USA, (61530H). 20 February, 2006. doi:10.1117/12.659757

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Author Blakey, I
Conley, W
George, GA
Hill, DJT
Liu, HP
Rasoul, F
Whittaker, AK
Title of paper Synthesis of high-refractive index sulfur containing polymers for 193-nm immersion lithography: A progress report
Conference name Advances in Resist Technology and Processing XXIII
Conference location San Jose, CA, USA
Conference dates 20 February, 2006
Convener The International Society for Optical Engineering
Proceedings title Proceedings of SPIE 2006   Check publisher's open access policy
Place of Publication Bellingham WA, USA
Publisher SPIE
Publication Year 2006
Sub-type Fully published paper
DOI 10.1117/12.659757
Open Access Status File (Publisher version)
ISBN 978-0-8194-6638-9
ISSN 0277-786X
Volume 6153
Start page 61530H
Total pages 10
Language eng
Abstract/Summary To be able to extend the 193 nm immersion lithography technology platform, the development of high refractive index immersion fluids and resists is required. This paper reports our investigations into generating high refractive index polymers for use in photoresist formulations for 193 nm immersion lithograph. In this study a series of model compounds have been screened for refractive index and transparency at 589 nm and 193 nm. For the compounds studied this series of experiments demonstrated that sulfur-containing compounds have a positive effect on the refractive index of a molecule at 589 nm. However, the situation is complicated by the presence of absorption bands for some small molecules in the low waveleingth region. To demonstrate this, we examined the refractive index dispersion of a series of molecules based on ethyl acetate with varying degrees of sulfur substitution. These results indicated that an anomalous increase in refractive index could be expected 20 - 30 nm above the absorption maximum. The implications for design of high refractive index resists for 193 nm immersion lithography are discussed.
Subjects 0303 Macromolecular and Materials Chemistry
Keyword immersion lithography technology platform
Q-Index Code E1
Additional Notes Copyright 2006 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

 
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Created: Fri, 23 Jan 2009, 17:33:58 EST by Gina Velli on behalf of Centre For Magnetic Resonance