Analysis of hot-carrier-induced degradation in MOSFET's by gate-to-drain and gate-to-substrate capacitance measurements

Hsu, C. T., Lau, M. P., Yeow, T. Y. T. and Yao, Z. Q. (2000). Analysis of hot-carrier-induced degradation in MOSFET's by gate-to-drain and gate-to-substrate capacitance measurements. In: W R Tonti, 2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual. 38th Annual International Reliability Physics Symposium, San Jose, (98-102). 10-13 April 2000.


Author Hsu, C. T.
Lau, M. P.
Yeow, T. Y. T.
Yao, Z. Q.
Title of paper Analysis of hot-carrier-induced degradation in MOSFET's by gate-to-drain and gate-to-substrate capacitance measurements
Conference name 38th Annual International Reliability Physics Symposium
Conference location San Jose
Conference dates 10-13 April 2000
Proceedings title 2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual
Place of Publication Piscataway
Publisher IEEE
Publication Year 2000
Sub-type Fully published paper
ISBN 0-7803-5860-0
Editor W R Tonti
Start page 98
End page 102
Total pages 5
Collection year 2000
Language eng
Subjects E2
290902 Integrated Circuits
671201 Integrated circuits and devices
Q-Index Code E2

 
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Created: Fri, 06 Jun 2008, 13:16:57 EST