Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate

Wang, Y., Wang, X. N., Mei, Z. X., Du, X. L., Zou, J., Jia, J. F., Xue, Q. K., Zhang, X. N. and Zhang, Z. (2007) Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate. Journal of Applied Physics, 102 12: 126102.1-126102.3. doi:10.1063/1.2821916

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Author Wang, Y.
Wang, X. N.
Mei, Z. X.
Du, X. L.
Zou, J.
Jia, J. F.
Xue, Q. K.
Zhang, X. N.
Zhang, Z.
Title Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate
Formatted title
Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
Publication date 2007-12-19
Sub-type Article (original research)
DOI 10.1063/1.2821916
Open Access Status File (Publisher version)
Volume 102
Issue 12
Start page 126102.1
End page 126102.3
Total pages 3
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2008
Language eng
Subject 291804 Nanotechnology
02 Physical Sciences
0915 Interdisciplinary Engineering
Formatted abstract
Epitaxial Mg2Si110 thin film has been obtained on Si111 substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111) Mg2Si(110) and Si(110) Mg2Si(110) has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg2Si film in a MgO/Mg2Si/ Si double heterostructure. 
Keyword Epitaxial layers
Magnesium compounds
Molecular beam epitaxial growth
Transmission electron microscopy
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article Number: 126102.

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Created: Thu, 01 May 2008, 16:56:25 EST by Sally Beard on behalf of Faculty Of Engineering, Architecture & Info Tech