Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding

Wang, Y., Zou, J., Huang, H., Zhou, L., Wang, B. L. and Wu, Y. Q. (2007) Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding. Nanotechnology, 18 46: 465705-1-465705-5. doi:10.1088/0957-4484/18/46/465705


Author Wang, Y.
Zou, J.
Huang, H.
Zhou, L.
Wang, B. L.
Wu, Y. Q.
Title Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding
Journal name Nanotechnology   Check publisher's open access policy
ISSN 0957-4484
Publication date 2007
Sub-type Article (original research)
DOI 10.1088/0957-4484/18/46/465705
Volume 18
Issue 46
Start page 465705-1
End page 465705-5
Total pages 5
Place of publication Bristol, U.K.
Publisher IOP
Collection year 2008
Language eng
Subject 291804 Nanotechnology
671699 Manufactured products not elsewhere classified
C1
0915 Interdisciplinary Engineering
Abstract The phase transformations of Si under nanogrinding have been studied by transmission electron microscopy and Raman spectroscopy. Nanocrystalline high-pressure phases (Si-III/Si-XII) were found in the amorphous layer of the subsurface of heavily ground Si. The sequence of the phase transformation in nanogrinding has been found to be different to that in nanoindentation. The formation mechanism of the nanocrystalline high-pressure phases in nanogrinding is proposed based on experimental results.
Keyword Engineering, Multidisciplinary
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Single-crystal Silicon
Monocrystalline Silicon
Micro-indentation
Transformations
Nanoindentation
Deformation
Simulation
Indenter
Wafers
Shape
Q-Index Code C1
Q-Index Status Confirmed Code

 
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Created: Mon, 18 Feb 2008, 15:23:43 EST