Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy

Tang, C.Y., Li, F.H., Wang, R., Zou, J., Zheng, X.H. and Liang, J.W. (2007) Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy. Physical Review B, 75 18: 184103-1-184103-7.


Author Tang, C.Y.
Li, F.H.
Wang, R.
Zou, J.
Zheng, X.H.
Liang, J.W.
Title Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy
Journal name Physical Review B   Check publisher's open access policy
ISSN 1098-0121
Publication date 2007
Year available 2007
Sub-type Article (original research)
DOI 10.1103/PhysRevB.75.184103
Volume 75
Issue 18
Start page 184103-1
End page 184103-7
Total pages 7
Editor Adams, P.D .
Place of publication College Pk
Publisher American Physical Soc
Collection year 2008
Language eng
Subject 291804 Nanotechnology
780102 Physical sciences
C1
Abstract The defects in 3C-SiC film grown on (001) plane of Si substrate were studied using a 200 kV high-resolution electron microscope with point resolution of 0.2 nm. A posterior image processing technique, the image deconvolution, was utilized in combination with the image contrast analysis to distinguish atoms of Si from C distant from each other by 0.109 nm in the [110] projected image. The principle of the image processing technique utilized and the related image contrast theory is briefly presented. The procedures of transforming an experimental image that does not reflect the crystal structure intuitively into the structure map and of identifying Si and C atoms from the map are described. The atomic configurations for a 30 degrees partial dislocation and a microtwin have been derived at atomic level. It has been determined that the 30 degrees partial dislocation terminates in C atom and the segment of microtwin is sandwiched between two 180 degrees rotation twins. The corresponding stacking sequences are derived and atomic models are constructed according to the restored structure maps for both the 30 degrees partial dislocation and microtwin. Images were simulated based on the two models to affirm the above-mentioned results.
Keyword Physics, Condensed Matter
Image Deconvolution
Polytypic Transformations
Heteroepitaxial Growth
Diffraction
Crystals
Heterostructures
Defects
Films
Hrem
Si
Q-Index Code C1
Q-Index Status Confirmed Code
Additional Notes Articles are listed below according to their six-digit article number. When citing these articles, the article number should be used instead of a page number; e.g., Phys. Rev. B 75, 180101 (2007).

 
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Created: Mon, 18 Feb 2008, 17:22:03 EST