Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth

Zou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002) Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 11: 1996-1998. doi:10.1063/1.1506414


Author Zou, J.
Liao, X. Z.
Cockayne, D. J. H.
Jiang, Z. M.
Title Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2002
Sub-type Article (original research)
DOI 10.1063/1.1506414
Volume 81
Issue 11
Start page 1996
End page 1998
Total pages 3
Place of publication Melville
Publisher Amer Inst Physics
Language eng
Subject 1007 Nanotechnology
Abstract The misfit dislocations in [001] Ge(Si)/Si islands grown at 700 degreesC were investigated using transmission electron microscopy. 30degrees partial misfit dislocations are found both in the island/substrate interface and near the island surface. Since the 30degrees partial leads the movement of the 60degrees dissociated misfit dislocation in a (001) compressively strained system such as (001) GeSi/Si, a generation mechanism of misfit dislocations through partial misfit dislocations half loops is proposed. (C) 2002 American Institute of Physics.
Keyword Physics, Applied
Strain Relaxation
Heterostructures
Heteroepitaxy
Transition
Energetics
Gaas(001)
Layers
Glide
Hrem
Si
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

 
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