Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth

Zou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002) Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 11: 1996-1998. doi:10.1063/1.1506414

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Author Zou, J.
Liao, X. Z.
Cockayne, D. J. H.
Jiang, Z. M.
Title Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2002-09-09
Sub-type Article (original research)
DOI 10.1063/1.1506414
Open Access Status File (Publisher version)
Volume 81
Issue 11
Start page 1996
End page 1998
Total pages 3
Place of publication Melville, NY, United States
Publisher AIP Publishing
Language eng
Abstract The misfit dislocations in [001] Ge(Si)/Si islands grown at 700 degreesC were investigated using transmission electron microscopy. 30degrees partial misfit dislocations are found both in the island/substrate interface and near the island surface. Since the 30degrees partial leads the movement of the 60degrees dissociated misfit dislocation in a (001) compressively strained system such as (001) GeSi/Si, a generation mechanism of misfit dislocations through partial misfit dislocations half loops is proposed. (C) 2002 American Institute of Physics.
Keyword Physics, applied
Strain relaxation
Heterostructures
Heteroepitaxy
Transition
Energetics
Gaas(001)
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

 
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Created: Wed, 17 Oct 2007, 11:31:26 EST