Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

Liao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002) Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 15: 153306 - 1-153306 - 4.


Author Liao, X. Z.
Zou, J.
Cockayne, D. J. H.
Wan, J.
Jiang, Z. M.
Jin, G.
Wang, K. L.
Title Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
Journal name Physical Review B   Check publisher's open access policy
Publication date 2002
Sub-type Article
DOI 10.1103/PhysRevB.65.153306
Volume number 65
Issue number 15
ISSN 1098-0121
Start page 153306 - 1
End page 153306 - 4
Total pages 4
Place of publication College Pk
Publisher American Physical Soc
Language eng
Subject 291804 Nanotechnology
Abstract Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575 degreesC were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.
Keyword Physics, Condensed Matter
Beam Epitaxial-growth
Coherent Islands
Energy-loss
Segregation
Gaas
Ge
Gaas(001)
Eels
Inas
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

 
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Created: Wed, 17 Oct 2007, 10:36:26 EST