Annealing effects on the microstructure of Ge/Si(001) quantum dots

Liao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2001) Annealing effects on the microstructure of Ge/Si(001) quantum dots. Applied Physics Letters, 79 9: 1258-1260. doi:10.1063/1.1398615

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Author Liao, X. Z.
Zou, J.
Cockayne, D. J. H.
Wan, J.
Jiang, Z. M.
Jin, G.
Wang, K. L.
Title Annealing effects on the microstructure of Ge/Si(001) quantum dots
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2001-08-27
Sub-type Article (original research)
DOI 10.1063/1.1398615
Open Access Status File (Publisher version)
Volume 79
Issue 9
Start page 1258
End page 1260
Total pages 3
Place of publication Melville, NY, United States
Publisher AIP Publishing
Language eng
Abstract Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 degreesC were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 degreesC for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. (C) 2001 American Institute of Physics.
Keyword Physics, applied
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: Centre for Microscopy and Microanalysis Publications
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 16 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 15 times in Scopus Article | Citations
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Created: Wed, 17 Oct 2007, 10:35:30 EST