Annealing effects on the microstructure of Ge/Si(001) quantum dots

Liao, XZ, Zou, J, Cockayne, DJH, Wan, J, Jiang, ZM, Jin, G and Wang, KL (2001) Annealing effects on the microstructure of Ge/Si(001) quantum dots. Applied Physics Letters, 79 9: 1258-1260.


Author Liao, XZ
Zou, J
Cockayne, DJH
Wan, J
Jiang, ZM
Jin, G
Wang, KL
Title Annealing effects on the microstructure of Ge/Si(001) quantum dots
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2001
Sub-type Article (original research)
DOI 10.1063/1.1398615
Volume 79
Issue 9
Start page 1258
End page 1260
Total pages 3
Place of publication Melville
Publisher Amer Inst Physics
Language eng
Abstract Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 degreesC were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 degreesC for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. (C) 2001 American Institute of Physics.
Keyword Physics, Applied
Interdiffusion
Superlattices
Islands
Eels
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Centre for Microscopy and Microanalysis Publications
 
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Created: Wed, 17 Oct 2007, 10:35:30 EST