Annealing effects on the microstructure of Ge/Si(001) quantum dots

Liao, XZ, Zou, J, Cockayne, DJH, Wan, J, Jiang, ZM, Jin, G and Wang, KL (2001) Annealing effects on the microstructure of Ge/Si(001) quantum dots. Applied Physics Letters, 79 9: 1258-1260. doi:10.1063/1.1398615

Author Liao, XZ
Zou, J
Cockayne, DJH
Wan, J
Jiang, ZM
Jin, G
Wang, KL
Title Annealing effects on the microstructure of Ge/Si(001) quantum dots
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2001
Sub-type Article (original research)
DOI 10.1063/1.1398615
Volume 79
Issue 9
Start page 1258
End page 1260
Total pages 3
Place of publication Melville
Publisher Amer Inst Physics
Language eng
Abstract Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 degreesC were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 degreesC for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. (C) 2001 American Institute of Physics.
Keyword Physics, Applied
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Centre for Microscopy and Microanalysis Publications
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Citation counts: TR Web of Science Citation Count  Cited 16 times in Thomson Reuters Web of Science Article | Citations
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Created: Wed, 17 Oct 2007, 10:35:30 EST