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Hong, Yang David, Yeow, YewTong, Chim, Wai Kin, Yan, Jian and Wong, Kin Mun (2006) Accurate Modeling of the Effects of Fringing Area Interface Traps on Scanning Capacitance Microscopy Measurement. IEEE Transactions on Electron Devices, 53 3: 499-506. doi:10.1109/TED.2005.864367 417 192 1 Cited 1 times in Scopus1 0
Hsu, C. T., Lau, M. P., Yeow, T. Y. T. and Yao, Z. Q. (2000). Analysis of hot-carrier-induced degradation in MOSFET's by gate-to-drain and gate-to-substrate capacitance measurements. In: W R Tonti, 2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual. 38th Annual International Reliability Physics Symposium, San Jose, (98-102). 10-13 April 2000. 51  
Hsu, C. T., Lau, M. M. and Yeow, Y. T. (2001) Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs. Microelectronics Reliability, 41 2: 201-209. doi:10.1016/S0026-2714(00)00222-5 82   5 Cited 5 times in Scopus5 0
Lau, M. M., Chiang, C. Y. T., Yeow, Y. T. and Yao, Z. Q. (2001) A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement. Ieee Transactions On Electron Devices, 48 8: 1742-1744. doi:10.1109/16.936698 123   7 Cited 7 times in Scopus7 0
Chan, J. C., Lu, Albert W., Cheung, Chi Hang, Ng, Alan Man Ching, Djurisic, A. B., Yeow, Yew Tong and Rakic, A. D. (2006). Cavity Design and Optimization for Organic Microcavity OLEDs. In: D. Abbott, Y. S. Kivshar, H. H. Rubinsztein-Dunlop and S. Fan, Proceedings of SPIE: Photonics: Design, Technology, and Packaging II. Conference on Microelectronics - Design, Technology and Packaging II, Brisbane, Australia, (3824-3824). 12-14 December, 2005. doi:10.1117/12.638368 706 801 0 Cited 1 times in Scopus1 0
Kong, FCJ, Yeow, YT and Domyo, H (2003) Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs. Electronics Letters, 39 4: 407-408. doi:10.1049/el:20030226 32   1 Cited 1 times in Scopus1 0
Bertling, Karl, Rakic, Aleksandar D., Yeow, Yew Tong, Brawley, Andrew, Domyo, Hiroshi and Rotella, Francis M. (2012) Comparison of SOS MOSFET's equivalent circuit parameters extracted from LCR meter and VNA measurement. IEEE Transactions on Electron Devices, 59 1: 20-25. doi:10.1109/TED.2011.2170426 81   3 Cited 3 times in Scopus3 0
Bertling, K., Rakic, A., Yeow, Y. T., O'Brien, C. J. and Domyo, H. (2012). Comparison of the RF characteristics of inversion channel and depletion channel SOS MOSFETs. In: COMMAD 2012 Proceedings. 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD 2012), Melbourne, Australia, (79-80). 12-14 December 2012. doi:10.1109/COMMAD.2012.6472369 56   0 Cited 0 times in Scopus0 0
Kong, Frederick, Lau, Mabe and Yeow, Yew-Tong (1999). Determination of carrier generation lifetime via current transient in MOS capacitor. In: L Faraone, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, WA, (438-441). 14-16 December 1998. doi:10.1109/COMMAD.1998.791683 75   0
Chan, J, Rakic, A. D., Yeow, Y. T. and Djurisic, A. B. (2005). Device optimization Based on Electrical and Optical Simulation of Tris(8-hydroxyquinoline) Aluminium Based Microacavity Organic Light Emitting Diode (MOLED). In: D. Bradley, W. Riess, B. Ruhstaller and S. Schrader, Proceedings of the 3rd European Conference on organic electronics and related phenomena. 3rd European Conf. on organic electronics & related phenomena, Winterthur, Switzerland, (96-97). 27-30 September 2005. 388 534
Chim, WK, Wong, KM, Teo, YL, Lei, Y and Yeow, YT (2002) Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation. Applied Physics Letters, 80 25: 4837-4839. doi:10.1063/1.1487899 46   8 Cited 8 times in Scopus8 0
Hong, Y. D., Yan, J., Wong, K. M., Yeow, Y. T. and Chim, W. K. (2004). Dopant Profile Extraction by Inverse Modeling of Scanning Capacitance Microscopy Using Peak dC/dV. In: 7th International Conference on Solid-State and Integrated Circuits Technology (ICSICT), Beijing, China, (954-957). 18-21 October, 2004. 202 660 0
Hong, Y. D., Yan, J., Wong, K., Yeow, T.Y.T. and Chim, W-K. (2004). Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dV. In: R. Huang, M. Yu, J. Liou, T. Hiramoto and C. Claeys, Proceedings of the Seventh International Conference on Solid-State and Integrated Circuits Technology. The Seventh International Conference on Solid-State and Integrated Circuits Technology, Beijing, China, (954-957). 18-21 October, 2004. 52   0
Chan, J., Rakic, A. D., Yeow, Y. T. and Djurisic, A. B. (2005). Electrical and Optical Simulation of Tris(8-hydroxyquinoline) Aluminium-Based Microcavity Organic Light Emitting Diode (MOLED). In: A.D. Rakic and Y.T Yeow, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2004 :Conference on Optoelectronic and Microelectronic Materials and Devices, The University of Queensland, Brisbane, Australia, (53-56). 8-10 December, 2004. doi:10.1109/COMMAD.2004.1577490 461 707 0 Cited 0 times in Scopus0 0
Yeow, T.Y.T. and Kong, F. C. J. (2001) Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement. IEEE Transactions on Electron Devices, 48 12: 2870-2874. doi:10.1109/16.974720 571   12 Cited 15 times in Scopus15 0
Boubals, A, Bertling, K., Domyo, Hiroshi, Brawley, A., Rakic, A. D. and Yeow, Y. (2010). Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements. In: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD). Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'2010), Canberra, ACT, Australia, (147-148). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699709 101   Cited 0 times in Scopus0 0
Bertling, K., Rakic, A. D., Yeow, Y. T., Brawley, A., Domyo, H. and Rotella, F. M. (2010) Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements. Electronics Letters, 46 12: 863-864. doi:10.1049/el.2010.0922 80   1 Cited 2 times in Scopus2 0
Domyo, Hiroshi, Imthurn, George, Ho, Tran, Miscione, Anthony M., Rakic, Aleksandar D. and Yeow, Yew-Tong (2011) Improvement in OFF-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film. Ieee Transactions On Electron Devices, 58 11: 3787-3792. doi:10.1109/TED.2011.2168401 68   3 Cited 3 times in Scopus3 0
Hong, Yang David, Yeow, Yew Tong, Chim, Wai-Kin, Wong, Kin-Mun and Kopanski, Joseph J. (2004) Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement. IEEE Transactions on Electron Devices, 51 9: 1496-1503. doi:10.1109/ted.2004.833590 306 289 7 Cited 8 times in Scopus8 0
Chiang, Y., Yeow, T. Y. T. and Ghodsi, R. (2000) Inverse modeling of 2-dimensional MOSFET dopant profile vias capacitance of the source/drain gated diode. IEEE Transactions on Electron Devices, 47 7: 1385-1392. doi:10.1109/16.848281 43   7 Cited 10 times in Scopus10 0
Lau, M. P., Hsu, C. T. and Yeow, T.Y.T. (2001). Investigations of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode. In: W. Tan, K, Pey, W. Chim and J. Thong, Proceedings of the 2001 Eighth International Symposium on the Physical and Failure Analysis of Integrated Circuits. Eighth International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, (249-253). 9-13 July, 2001. doi:10.1109/IPFA.2001.941496 56   3 0
Lau, M. P., Chiang, Y., Yeow, Y. T. and Yao, Z. Q. (1999). Measurement of VT and Leff using MOSFET gate-substrate capacitance. In: Proceedings of the 1999 International Conference on Microelectronic Test Structures. ICMTS'99, Goteborg, (152-155). 15-18 March 1999. 54  
Hong, Y. D. and Yeow, Y. T. (2003). Modeling Mobility Degradation in Scanning Capacitance Microscopy for Semiconductor Dopant Profile Measurement. In: Chiao, Jung-Chih, Hariz, Alex J., Jamieson, David N., Parish, Giacinta and Varadan, Vijay K., SPIE International Symposium on Microelectronics, MEMS, and Nanotechnology, Perth, Australia, (548-555). 9-12 December, 2003. 305 726
Yang, J. and Yeow, T.Y.T. (2001). Modeling study of scanning capacitance microscopy measurement for P-N junction dopant profile extraction. In: B. Li, G. Ru, X. Qu, P. Yu and H. Iwai, 2002 Sixth International Conference on Solid-State and Integrated Circuit Technology Proceedings. Sixth International Conference on Solid-State and Integrated Circuit Technology, Shanghai, (1043-1046). 22-25 October, 2001. 89   0
Hong, Y. D. and Yeow, Y. T. (2004). Modeling the Effects of Interface Traps on Scanning Capacitance Microscopy dC/dV Measurement. In: Rakic, Aleksandr D. and Yeow, Yew Tong, Conference on Optoelectronics and Microelectronic Materials and Devices (COMMAD), Brisbane, Australia, (). 8-10 December, 2004. 211 326
Yip, A., Yeow, T. Y. T., Samudra, G. S. and Ling, C. H. (2000). Modelling of the gated-diode configuration in bulk mosfet's. In: M. Laudon and B. Romanowicz, 2000 International Conference on Modeling and Simulation of Microsystems: MSM 2000. MSM 2000, San Diego, CA USA, (360-363). 27-29 March 2000. 79  
Hong, Y. D. and Yeow, T.Y.T. (2005). Modelling the effects of interface traps on scanning capacitance microsopy dC/dV measurement. In: A. D. Rakic and Y. T. Yeow, 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings. 2004 Conference on Optoelectronic and Microelectronic Material, Brisbane, Australia, (149-152). 8-10 December 2004. doi:10.1109/COMMAD.2004.1577514 26   Cited 0 times in Scopus0 0
Chim, W. K., Wong, K. M., Yeow, Y. T., Hong, Y. D., Lei, Y., Teo, L. W. and Choi, W. K. (2003) Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements. IEEE Electron Device Letters, 24 10: 667-670. doi:10.1109/LED.2003.817390 198 209 8 Cited 10 times in Scopus10 0
Domyo, H., Bertling, K., Ho, T., Kistler, N., Imthurn G., Stuber, M., Rakic, A.D. and Yeow, Y. T. (2008) Monitoring the electrical properties of the back silicon interface of silicon-on-sapphire wafers. IEEE Electron Device Letters, 29 4: 325-327. doi:10.1109/LED.2008.918263 85   4 Cited 5 times in Scopus5 0
Bertling, K., Rakic, A.D. and Yeow, Y.T. (2007). Numerical modelling study of the sensitivity of SOS MOSFET characteristics to silicon film thickness and back surface trapped charge variation. In: Faraone, L., Betts, S., Dell, J., Musca, C., Nener, B., Parish, G. and Wehner, J., COMMAD 2006: Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2006), Perth, WA, (283-285). 6-8 December, 2006. doi:10.1109/COMMAD.2006.4429937 78   0 Cited 0 times in Scopus0 0
Domyo, H., Bertling, K., Ho, T., Kistler, N., Imthurn, G., Stuber, M., Rakic, A. D. and Yeow, Y-T. (2008). Origin of the low frequency type curve in silicon-on-sapphire MOS capacitors. In: L. Faraone and M. Cortie, IEEE: Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), Sydney, Australia, (129-131). 28th July - 1st August, 2008. doi:10.1109/COMMAD.2008.4802108 78   0 Cited 0 times in Scopus0 0
Bertling, K., Domyo, H., Kim, Y.T., Ho, T., Rakic, A.D. and Yeow, Y-T (2008). Parameter extraction for silicon-on-sapphire MOSFETs by using inverse modelling of capacitance measurements. In: L. Faraone, M. Cortie, A. Cuevas, J. Dell and et. al., 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) Proceedings. 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), Sydney, Australia, (129-131). 28 July - 1 August, 2008. 93  
Bertling, K., Rakic, A. D., Yeow, Y. T., O'Brien, C. J. and Domyo, H. (2012) SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology. Microwave and Optical Technology Letters, 54 12: 2755-2757. doi:10.1002/mop.27163 54   0 Cited 0 times in Scopus0 0
Hsieh, D. H. and Yeow, T. Y. T. (2000). Study of the cycle-by-cycle F. In: 9th International Conference on Chinese Linguistics cum International Symposium of Chinese Language Teaching. 9th International Conference on Chinese Linguistics, Singapore, (42-42). 26-28 June 2000. 34  
Seet, A. W. and Yeow, Y. T. (1998). Teaching of semiconductor device physics with numerical partial differential equations solver. In: P Howard, C. Swarbrick and A. Churches, Proceedings of the 10th Australasian conference on Engineering Education. Waves of Change, Gladstone, (491-496). 28-30 September 1998. 39  
Yeow, Y. T. and Ling, C. H. (1999) Teaching semiconductor device physics with two-dimensional numerical solver. IEEE Transactions on Education, 42 1: 50-58. doi:10.1109/13.746335 66   3 Cited 3 times in Scopus3 0
Chiang, Y., Yeow, T. Y. T. and Ghodsi, R. (2000). Two dimensional mosfet dopant profile by inverse modelling via source/drain-to-substrate capacitance measurement. In: M. Laudon and B. Romanowicz, 2000 International Conference on Modeling and Simulation of Microsystems: MSM 2000. MSM 2000, San Diego, CA USA, (368-371). 27-29 March 2000. 46