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Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998) Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 10: 1190-1192. doi:10.1063/1.121030 59   63 Cited 69 times in Scopus69 0
Yuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998) Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 3: 1305-1311. doi:10.1063/1.366830 73   42 0
Paiman, S., Gao, Q., Joyce, H.J., Tan, H.H., Jagadish, C., Kim, Y., Guo, Y. and Zou, J. (2010). Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (37-38). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699767 68   Cited 0 times in Scopus0 0
Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996) Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 16: 2364-2366. doi:10.1063/1.117526 24   90 Cited 100 times in Scopus100 0
Titova, L.V., Hoang, T.B., Yarrison-Rice, J.M., Jackson, H.E., Kim, Y., Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C., Zhang, X., Zou, J. and Smith, LM (2007) Dynamics of strongly degenerate electron-hole Plasmas and excitons in single InP nanowires. Nano Letters, 7 11: 3383-3387. doi:10.1021/nl071733l 123   31 Cited 34 times in Scopus34 0
Guo, Y., Zou, J., Joyce, H. J., Gao, Q., Tan, H. H. and Jagadish, C. (2010). Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (51-52). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699774 66 1 Cited 0 times in Scopus0 0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zhang, X. and Zou, J. (2009). Effect of the crystal structure on the optical properties of InP nanowires. In: IEEE LEOS annual meeting conference proceedings, 2009. 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, (145-146). 4-8 October 2009. doi:10.1109/LEOS.2009.5343092 28   0 Cited 0 times in Scopus0 0
Xu, H. Y., Guo, Y. N., Wang, Y., Zou, J., Kang, J. H., Gao, Q., Tan, H. H. and Jagadish, C. (2009) Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si. Journal of Applied Physics, 106 8: 083514-1-083514-4. doi:10.1063/1.3248372 129   7 Cited 5 times in Scopus5 0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2013) Effects of growth rate on InP nanowires morphology and crystal structure. Journal of Crystal Growth, 383 100-105. doi:10.1016/j.jcrysgro.2013.08.014 65   2 Cited 1 times in Scopus1 0
Gao, Q., Tan. H. H., Sun, B. Q., Gal, M., Ouyang, L., Zou, J. and Jagadish, C. (2005). Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures. In: Proceedings of the13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004.. Semiconducting and Insulating Materials, Beijing, China, (194-197). 20 - 25 September, 2004. doi:10.1109/SIM.2005.1511416 37   0
Chen, Z. B., Lei, W., Chen, B., Wang, Y. B., Liao, X. Z., Tan, H. H., Zou, J., Ringer, S. P. and Jagadish, C. (2014) Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition. Applied Physics Letters, 104 2: 022108.1-022108.5. doi:10.1063/1.4859915 44   0 Cited 0 times in Scopus0 0
Zhang, X, Zou, J, Paladugu, M, Guo, YA, Wang, Y, Kim, Y., Joyce, H.J., Gao, Q., Tan, H.H. and Jagadish, C. (2009) Evolution of Epitaxial InAs Nanowires on GaAs (111)B. SMALL, 5 3: 366-369. doi:10.1002/smll.200800690 58   17 Cited 18 times in Scopus18 0
Paladugu, M., Zou, J., Auchterlonie, G. J., Guo, Y. N., Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H. and Jagadish, C. (2007) Evolution of InAs branches in InAs/GaAs nanowire heterostructures. Applied Physics Letters, 91 13: 133115.1-133115.3. doi:10.1063/1.2790486 124   25 Cited 19 times in Scopus19 0
Paladugu, M., Zou, J., Guo, Y.N., Zhang, X, Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C. and Kim, Y. (2009) Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores. NANOSCALE RESEARCH LETTERS, 4 8: 846-849. doi:10.1007/s11671-009-9326-6 67   12 Cited 12 times in Scopus12 0
Paladugu, M., Zou, J., Guo, Y.-N., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth. In: T. S. Mayer, 2007 MRS Fall Meeting - Symposium JJ – Nanowires–Novel Assembly Concepts and Device Integration. Proceedings. 2007 MRS Fall Meeting, Boston, MA, USA, (1-7). 26-30 November, 2007. doi:10.1557/PROC-1058-JJ01-09 19   Cited 0 times in Scopus0 0
Paladugu, M., Zou, J., Guo, Y.N., Zhang, X, Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C. and Kim, Y. (2009) Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 48 4: 780-783. doi:10.1002/anie.200804630 71   24 Cited 24 times in Scopus24 0
Gao, Q., Kim, Y., Tan, H. H., Jagadish, C., Wang, H., Guo, Y. N. and Zou, J. (2006). GaSb/GaAs nanowire heterostructures grown on GaAs by metalorganic chemical vapor deposition. In: COMMAD 2006, WO-B2. COMMAD 2006, WO-B2, xx, (1). xx. 45  
Gao, Q., Tan, H. H., Jagadish, C., Sun, B. Q., Gal, M., Ouyang, L. and Zou, J. (2002). Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure. In: Gal, Michael, Proceedings of the 2002 Conference on Optoelectronic and Microelecttronic Materials and Devices. Optoelectronic and Microelecttronic Materials and Devices, University of Sydney, NSW, Australia, (247-250). 11 - 13 December, 2002. 66  
Gao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J., Johnston, M. and Jagadish, C. (2011). Growth and characterization of III-V compound semiconductor nanowires. In: 16th Opto-Electronics and Communications Conference (OECC), 2011. 16th Opto-Electronics and Communications Conference, OECC 2011, Kaohsiung, Taiwan, (366-367). 4-8 July 2011. 23 1 Cited 0 times in Scopus0
Gao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, Jin and Jagadish, C. (2011) Growth and properties of III-V compound semiconductor heterostructure nanowires. Semiconductor Science and Technology, 26 1: . doi:10.1088/0268-1242/26/1/014035 45   14 Cited 9 times in Scopus9 0
Gao, Q., Tan, H. H.., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J. and Jagadish, C. (2012) Growth and properties of III-V compound semiconductor heterostructure nanowires (vol 26, 014035, 2011). Semiconductor Science and Technology, 27 5: . doi:10.1088/0268-1242/27/5/059501 70   0 Cited 0 times in Scopus0 0
Zou, J., Paladugu, M., Guo, Y. N., Zhang, X., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Growth behavior of epitaxial semiconductor axial nanowire heterostructures. In: Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008, Sydney, Australia, (71-74). 28 July-1 September 2008. doi:10.1109/COMMAD.2008.4802094 52   0 Cited 0 times in Scopus0 0
Xu, H. Y., Guo, Y. N., Liao, Z. M., Zou, J., Gao, Q., Tan, H. H. and Jagadish, C. (2012). Growth of defect-free InAs Nanowires using Pd catalyst. In: COMMAD 2012 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, (31-32). 12-14 December 2012. doi:10.1109/COMMAD.2012.6472345 22   1 Cited 0 times in Scopus0 0
Xu, H.Y., Wang, Y., Guo, Y.N., Zou, J., Gao, Q., Tan, H.H. and Jagadish, C. (2010). Growth of GaAs nanowires using different Au catalysts. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (35-36). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699766 65 1 Cited 0 times in Scopus0 0
Paiman, S., Gao, Q., Joyce, H. J., Kim, Y., Tan, H. H., Jagadish, C., Zhang, X., Guo, Y. and Zou, J. (2010) Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires. Journal of Physics D: Applied Physics, 43 44: 445402-1-445402-6. doi:10.1088/0022-3727/43/44/445402 93   17 Cited 16 times in Scopus16 0
Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C., Kim, Y., Fickenscher, M.A., Perera, S., Hoang, T.B., Smith, L.M., Jackson, H.E., Yarrison-Rice, J.M., Zhang, X. and Zou, J. (2008) High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization. Advanced Functional Materials, 18 23: 3794-3800. doi:10.1002/adfm.200800625 37   46 Cited 52 times in Scopus52 0
Gao, Q., Joyce, H., Kim, Y., Tan, H. H., Jagadish, H., Wang, H., Guo, Y. N. and Zou, J. (2007). III-V compound semiconductor nanowires for optoelectronic applications. In: Narasimhan, K. L., 2007 International Workshop on Physics of Semiconductor Devices. IWPSD 2007: 14th International Workshop on the Physics of Semiconductor Devices, Tata Institute of Fundamental Research; Indian Institute of Technology, Bombay, (344-344). 16-20 December 2007. doi:10.1109/IWPSD.2007.4472514 102   Cited 0 times in Scopus0 0
Gao, Q., Joyce, H. J., Paiman, S., Kang, J. H., Tan, H. H., Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zou, J. and Jagadish, C. (2011) III-V compound semiconductor nanowires for optoelectronic device applications. International Journal of High Speed Electronics and Systems, 20 1: 131-141. doi:10.1142/S0129156411006465 38   Cited 0 times in Scopus0 0
Kim, Y., Gao, Q., Joyce, H. J., Tan, H. H., Jagadish, C., Paladugu, M. and Zou, J. (2006). III-V nanowires for optoelectronics. In: Y H Lee, F Koyama and Y Luo, Proceedings of SPIE. Proceedings of SPIE, xx, (635226). 2006. 36  
Kim, Yong, Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Paladugu, M. and Zou, J. (2006). III-V Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronics Applications. In: 210th Meeting of The Electrochemical Society | XXI Congreso de la Sociedad Mexicana de Electroquimica. 2006 Joint International Meeting, Cancun, Mexico, (). 29 October - 3 November, 2006. 66  
Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Paladugu, M. and Zou, J. (2006). III-V Nanowires grown by metal-organic chemical vapour deposition for optoelectronic applicatins. In: Mat Res Soc 2006 Fall Meeting, Symposium Q: Nanowires and carbon nanotubes - Science and Applications. Mat Res Soc 2006 Fall Meeting, Symposium K: Zinc Oxide and Related Materials, xx, (28). 2006. 42  
Kim, Y., Joyce, H. J., Gao, O., Tan, H. H., Jagadish, C., Paladugu, M., Zou, J. and Suvorova, A. A. (2006) Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires. Nano Letters, 6 4: 599-604. doi:10.1021/nl052189o 72   130 Cited 142 times in Scopus142 0
Ramesh, V., Gao, Q., Tan, H. H., Paiman, S., Guo, Y. N., Zou, J. and Jagadish, C. (2010). InP/InGaAs core-shell nanowire heterostructures: Growth and characterisation. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (83-84). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699792 105   Cited 0 times in Scopus0 0
Kucheyev, S. O., Coleman, V. A., Jagadish, C., Zou, Jin, Williams, J. and Tan, H. H. (2007). Ion-beam processing of ZnO. In: Optoelectronics 2007, Zinc Oxide Materials and Devices II. Optoelectronics 2007, San Jose, CA, USA, (21-21). 21 January 2007. 46  
Tan, H. H., Jagadish, C., Williams, J. S., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1995) Ion damage buildup and amorphization processes in AlxGa1-xAs. Journal of Applied Physics, 77 1: 87-94. doi:10.1063/1.359358 37   52 Cited 49 times in Scopus49 0
Gao, Q., Joyce, H.J., Paiman, S., Kang, J.H., Tan, H.H., Kim, Y., Smith, L.M., Jackson, H.E., Yarrison-Rice, J.M., Zhang, X., Zou, Jin and Jagadish, C. (2009) Nanowires for optoelectronic device applications. Physica Status Solidi (C), 6 12: 2678-2682. doi:10.1002/pssc.200982528 127   1 Cited 1 times in Scopus1 0
Perera, S., Fickenscher, M. A., Jackson, H. E., Smith, L. M., Yarrison-Rice, J.M., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2008) Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures. Applied Physics Letters, 93 5: 053110.1-053110.3. doi:10.1063/1.2967877 152   44 Cited 39 times in Scopus39 0
Kang, J. H., Gao, Q., Joyce, H. J., Tan, H. H., Jagadish, C., Kim, Y., Choi, D. Y., Guo, Y., Xu, H., Zou, J., Fickenscher, M. A., Smith, L. M., Jackson, H. E. and Yarrison-Rice, J. M. (2010) Novel growth and properties of GaAs nanowires on Si substrates. Nanotechnology, 21 3: 035604-1-035604-7. doi:10.1088/0957-4484/21/3/035604 122   19 Cited 18 times in Scopus18 0
Paladugu, M., Zou, J., Guo, Y. N., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2007) Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures. Small, 3 11: 1873-1877. doi:10.1002/smll.200700222 83   58 Cited 58 times in Scopus58 0
Jackson, H. E., Perera, S., Fickenscher, M. A., Smith, L. M., Yarrison-Rice, J. M., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2008). Optical properties of single InP and GaAs nanowire heterostructures. In: IEEE Lasers and Electro-Optics Society, 2008. 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA United States, (427-428). 9-13 November 2008. doi:10.1109/LEOS.2008.4688673 18   Cited 0 times in Scopus0 0
Kang, J. H., Gao, Q., Parkinson, P., Joyce, H. J., Tan, H. H., Kim, Y., Guo, Y., Xu, H., Zou, J. and Jagadish, C. (2012) Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates. Nanotechnology, 23 41: 415702.1-415702.11. doi:10.1088/0957-4484/23/41/415702 51   5 Cited 5 times in Scopus5 0
Chen, Z. B., Lei, W., Chen, B., Wang, Y. B., Liao, X. Z., Tan, H. H., Zou, J., Ringer, S. P. and Jagadish, C. (2013) Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy. Scripta Materialia, 69 8: 638-641. doi:10.1016/j.scriptamat.2013.07.020 57   2 Cited 2 times in Scopus2 0
Jackson, H. E., Perera, S., Pemasiri, K., Smith, L. M., Yarrison-Rice, J., Kang, J. H., Gao, Q., Tan, H. H., Jagadish, C., Guo, Y. and Zou, J. (2011). Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy. In: Chi-sun Im and Hyeonsik Cheong, Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors. 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, (481-482). 25-30 July 2010. doi:10.1063/1.3666463 24   1 Cited 1 times in Scopus1 0
Guo, Y., Zou, J., Burgess, T., Ga, Q., Tan, H. H. and Jagadish, C. (2012). Shell Formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect. In: COMMAD 2012 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, (51-52). 12-14 December 2012. doi:10.1109/COMMAD.2012.6472355 32   0 Cited 0 times in Scopus0 0
Paladugu, M., Zou, J., Guo, Y. N., Aucherterlonie, G. J., Joyce, H. J., Goa, Q., Tan, H H., Jagadish, C. and Kim, Y. (2007). Sliding of Au droplet in vapor?liquid?solid growth of semiconductor nanowire heterostructures. In: Proceedings. Nanostructures for Electronics Energy and Environment (NanoE3), Couran Cove, Qld, Australia, (24-35). 23-28 September, 2007. 66  
Guo, Y, Zou, J, Paladugu, M., Wang, H., Gao, Q., Tan, H. H. and Jagadish, C. (2006) Structural characteristics of GaSB / GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition. Applied Physics Letters, 89 23: 231917-1-231917-3. doi:10.1063/1.2402234 60   54 Cited 45 times in Scopus45 0
Carmody, C., Tan, H. H., Jagadish, C., Zou, J., Dao, L. and Gal, M. (2002). Structural electrical and optical properties of MeV ion implanted InP. In: Gal, Michael, Proceedings of the 2002 Conference on Optoelectronic and Microelecttronic Materials and Devices. Optoelectronic and Microelecttronic Materials and Devices, Sydney, (487-490). 9 - 113 December, 2002. 36   0
Zou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. In: Hector A. Calderon Benavides and M. Jose Yacaman, Electron microscopy 1998 : proceedings of the 14th International Congress on Electron Microscopy. 14th International Congress on Electron Microscopy, Cancún, Mexico, (481-482). 31 August-4 September 1998. 48   0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zhang, X. and Zou, J. (2009) The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires. Nanotechnology, 20 22: 225606.1-225606.7. doi:10.1088/0957-4484/20/22/225606 94   55 Cited 45 times in Scopus45 0
Coleman, V. A., Tan, H. H., Jagadish, C., Kucheyev, S. O., Phillips, M. R. and Zou, Jin (2004). Towards p-Type Doping of ZnO by Ion Implantation. In: Symposium B: Progress in Semiconductor Materials IV--Electronic and Optoelectronic Applications. Materials Research Society 2004 Fall Meeting (MRS), Boston, (53-54). 29 Nov - 3 Dec 2004. 135  

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