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Chen, J., Yuan, X. L. and Sekiguchi, T. (2008) Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique. Scanning, 30 4: 347-353. doi:10.1002/sca.20116 67   2 Cited 2 times in Scopus2 0
Yuan, X. L., Lazzarini, L., Salviati, G., Zha, M. and Sekiguchi, T. (2006). Cathodoluminescence characterization of SnO2 nanoribbons grown by vapor transport technique. In: Zhanguo Wang, 11th International Conference on Defects: Recognition Imaging and Physics in Semiconductors (DRIP-XI), Beijing, China, (331-336). 13-19 September 2005. doi:10.1016/j.mssp.2006.01.029 54   5 Cited 4 times in Scopus4 0
Yuan, X. L., Zhang, B. P., Niitsuma, J. and Sekiguchi, T. (2006). Cathodoluminescence characterization of ZnO nanotubes grown by MOCVD on sapphire substrate. In: Materials Science in Semiconductor Processing: 11th Conference on Defects Recognition Imaging and Physics in Semiconductors. 11th International Conference on Defects: Recognition Imaging and Physics in Semiconductors (DRIP-XI), Beijing, China, (146-150). 13-19 September 2006. doi:10.1016/j.mssp.2006.01.037 92   23 Cited 25 times in Scopus25 0
Yuan, X. L., Niitsuma, J., Sekiguchi, T., Takase, M. and Taniguchi, T. (2005). Characterization of p-n junction formed at the boundary of facets in cubic-BN using scanning electron microscope. In: N. Fujimori, S. Yamasaki, K. Kobashi, H. Kawarada and N. Ohtake, Diamond and Related Materials: Proceedings of the 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999). 10th International Conference on New Diamond Science and Technology (ICNDST-10) - ICNDST-10, Tsukuba, Japan, (1955-1959). 11-14 May, 2005. doi:10.1016/j.diamond.2005.08.011 42   1 Cited 1 times in Scopus1 0
Yuan, X. L., Sekiguchi, T., Ri, S. G. and Ito, S. (2004) Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique. Applied Physics Letters, 84 17: 3316-3318. doi:10.1063/1.1734688 42   15 Cited 15 times in Scopus15 0
Sekiguchi, T., Chandra, M. R., Yao, Y. Z., Yuan, X. L., Tsuji, K. and Kang, J. Y. (2006). Effect of the oblique excitation and detection on the cathodoluminescence spectra. In: Professor Wang, Professor Yang and Dr. Qu, Materials Science in Semiconductor Processing. 11th International Conference on Defects - Recognition Imaging and Physics in Semiconductors (DRIP-XI), Beijing, China, (19-24). 13-19 Sep 2006. doi:10.1016/j.mssp.2006.01.067 46   0 Cited 0 times in Scopus0 0
Niitsuma, J., Sekiguchi, T., Yuan, X.-L. and Awano, Y. (2007) Electron beam nanoprocessing of a carbon nanotube film using a variable pressure scanning electron microscope. Journal of Nanoscience And Nanotechnology, 7 7: 2356-2360. doi:10.1166/jnn.2007.420 33   0 Cited 2 times in Scopus2 0
Chen, Z. Q., Maekawa, M., Yamamoto, S., Kawasuso, A., Yuan, X. L., Sekiguchi, T., Suzuki, R. and Ohdaira, T. (2004) Evolution of voids in Al+-implanted ZnO probed by a slow positron beam. Physics Review B, 69 3: 035210-1-035210-10. doi:10.1103/PhysRevB.69.035210 56   65 Cited 66 times in Scopus66 0
Xu, L. Q., Zhan, J. H., Hu, J. Q., Bando, Y., Yuan, X. L., Sekiguchi, T., Mitome, M. and Golberg , D. (2007) High-yield synthesis of rhombohedral boron nitride triangular nanoplates. Advanced Materials, 19 16: 2141-2144. doi:10.1002/adma.200700366 87   40 Cited 41 times in Scopus41 0
Dierre, B., Yuan, X. L., Yao, Y, Yokohama, M. and Sekiguchi, T. (2008) Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN. Journal of Materials Science: Materials in Electronics, 19 Supp. 1: 307-310. doi:10.1007/s10854-008-9603-7 57   6 Cited 6 times in Scopus6 0
Zhang, Y. J., Wang, J. B., Zhong, X. L., Zhou, Y. C., Yuan, X. L. and Sekiguchi, T. (2008) Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films. Solid State Communications, 148 9-10: 448-451. doi:10.1016/j.ssc.2008.09.014 80   10 Cited 9 times in Scopus9 0
Yuan, X. L., Sekiguchi, T., Niitsuma, J., Sakuma, Y., Ito, S. and Ri, S. G. (2005) Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2. Applied Physics Letters, 86 16: 162102-1-162102-3. doi:10.1063/1.1905802 82   6 Cited 6 times in Scopus6 0
Dierrre, B., Yuan, X. L., Hirosaki, N., Kimura, T., Xie, R-J. and Sekiguchi, T. (2008) Luminescence distribution of Yb-doped Ca-a-SiAlON phosphors. Journal of Materials Research, 23 6: 1701-1705. doi:10.1557/JMR.2008.0208 89   11 Cited 12 times in Scopus12 0
Dierre, B., Yuan, X. L. and Sekiguchi, T. (2008) Luminescence evolution of ZnO single crystal under low-energy electron beam irradiation. Journal of Applied Physics, 104 4: 43528-1-43528-4. doi:10.1063/1.2973190 85   8 Cited 7 times in Scopus7 0
Dierre, B., Yuan, X. L., Hirosaki, N., Xie, R. J. and Sekiguchi, T. (2008) Luminescence properties of Ca- and Yb-codoped SiAlON phosphors. Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 146 1-3: 80-83. doi:10.1016/j.mseb.2007.07.047 88   12 Cited 12 times in Scopus12 0
Chen, Z. Q., Kawasuso, A., Xu,Y., Naramoto, H., Yuan, X. L., Sekiguchi, T., Suzuki, R. and Ohdaira, T. (2005) Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam. Physical Review B, 71 11: 115213-115220. doi:10.1103/PhysRevB.71.115213 61   60 Cited 64 times in Scopus64 0
Chen, Z. Q., Sekiguchi, T., Yuan, X. L., Maekawa, M. and Kawasuso, A. (2004) N+ ion-implantation-induced defects in ZnO studied with a slow positron beam. Journal of Physics: Condensed Matter, 16 2: S293-S299. doi:10.1088/0953-8984/16/2/035 52   16 Cited 19 times in Scopus19 0
Chen, Z. Q., Yamamoto, S., Maekawa, M., Kawasuso, A., Yuan, X. L. and Sekiguchi, T. (2003) Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements. Journal of Applied Physics, 94 8: 4807-4812. doi:10.1063/1.1609050 105   113 Cited 117 times in Scopus117 0
Chen, Z. Q., Kawasuso, A., Xu, Y., Naramoto, H., Yuan, X. L., Sekiguchi, T., Suzuki, R. and Ohdaira, T. (2005) Production and recovery of defects in phosphorus-implanted ZnO. Journal of Applied Physics, 97 1: 013528-1-013528-6. doi:10.1063/1.1821636 58   101 Cited 102 times in Scopus102 0
Shen, G. Z., Bando, Y., Zhi, C. Y., Yuan, X. L., Sekiguchi, T. and Golberg, D. (2006) Single-crystalline cubic structured InP nanosprings. Applied Physics Letters, 88 24: 243106-1-243106-3. doi:10.1063/1.2208933 53   27 Cited 26 times in Scopus26 0
Hu, J. Q., Bando, J. H., Zhan, M. Y., Goldberg, D,, Yuan, X. L. and Sekiguchi, T. (2005) Single-crystalline nanotubes of IIB-VI semiconductors. Applied Physics Letters, 87 11: 113107-113109. doi:10.1063/1.2042634 56   31 Cited 33 times in Scopus33 0
Lin, J., Bando, Y., Huang, Y., Tang, C. C., Dierre, B., Sekiguchi, T. and Golberg, D. (2010). Structural characterization and cathodoluminescence of individual BN layers-sheathed Cas:Eu nanowires. In: INEC 2010 : 2010 3rd International Nanoelectronics Conference Proceedings. 2010 3rd International Nanoelectronics Conference (INEC 2010), Hong Kong, China, (132-133). 3-8 January 2010. doi:10.1109/INEC.2010.5424577 32   0 Cited 0 times in Scopus0 0
Yuan, X. L., Sekiguchi, T., Ri, S. G. and Ito, S. (2004). Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques. In: Jean-Pierre Landesman and Paul C. Montgomery, European Physical Journal Applied Physics. Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X), Batz-sur-Mer, France, (337-339). 29 September - 2 October, 2003. doi:10.1051/epjap:2004119 69   1 Cited 1 times in Scopus1 0
Chen, Z. Q., Wang, S. J., Maekawa, M., Kawasuso, A., Naramoto, H., Yuan, X. L. and Sekiguchi, T. (2007) Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation. Physical Review B: Condensed Matter and Materials Physics, 75 24: 245206-1-245206-9. doi:10.1103/PhysRevB.75.245206 73   41 Cited 40 times in Scopus40 0
Yuan, X. L., Chen, J., Ri, S. G., Ito, S. and Sekiguchi, T. (2007) Visibility of misfit dislocations at the interface of strained Si/Si0.8Ge0.2 by EBIC. Physica Status Solidi (C), 4 8: 3030-3036. doi:10.1002/pssc.200675461 59   0 Cited 0 times in Scopus0 0