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Yuan, X. L., Sekiguchi, T., Niitsuma, J., Sakuma, Y., Ito, S. and Ri, S. G. (2005) Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2. Applied Physics Letters, 86 16: 162102-1-162102-3. doi:10.1063/1.1905802 86   6 Cited 6 times in Scopus6 0