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Yuan, X. L., Sekiguchi, T., Ri, S. G. and Ito, S. (2004) Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique. Applied Physics Letters, 84 17: 3316-3318. doi:10.1063/1.1734688 41   15 Cited 15 times in Scopus15 0
Yuan, X. L., Sekiguchi, T., Niitsuma, J., Sakuma, Y., Ito, S. and Ri, S. G. (2005) Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2. Applied Physics Letters, 86 16: 162102-1-162102-3. doi:10.1063/1.1905802 81   6 Cited 6 times in Scopus6 0
Yuan, X. L., Sekiguchi, T., Ri, S. G. and Ito, S. (2004). Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques. In: Jean-Pierre Landesman and Paul C. Montgomery, European Physical Journal Applied Physics. Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X), Batz-sur-Mer, France, (337-339). 29 September - 2 October, 2003. doi:10.1051/epjap:2004119 67   1 Cited 1 times in Scopus1 0
Yuan, X. L., Chen, J., Ri, S. G., Ito, S. and Sekiguchi, T. (2007) Visibility of misfit dislocations at the interface of strained Si/Si0.8Ge0.2 by EBIC. Physica Status Solidi (C), 4 8: 3030-3036. doi:10.1002/pssc.200675461 58   0 Cited 0 times in Scopus0 0