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Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998) Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 10: 1190-1192. doi:10.1063/1.121030 59   63 Cited 69 times in Scopus69 0
Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996) Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 16: 2364-2366. doi:10.1063/1.117526 24   90 Cited 100 times in Scopus100 0
Zou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. In: Hector A. Calderon Benavides and M. Jose Yacaman, Electron microscopy 1998 : proceedings of the 14th International Congress on Electron Microscopy. 14th International Congress on Electron Microscopy, CancĂșn, Mexico, (481-482). 31 August-4 September 1998. 48   0