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Paiman, S., Gao, Q., Joyce, H.J., Tan, H.H., Jagadish, C., Kim, Y., Guo, Y. and Zou, J. (2010). Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (37-38). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699767 69   Cited 0 times in Scopus0 0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zhang, X. and Zou, J. (2009). Effect of the crystal structure on the optical properties of InP nanowires. In: IEEE LEOS annual meeting conference proceedings, 2009. 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, (145-146). 4-8 October 2009. doi:10.1109/LEOS.2009.5343092 28   0 Cited 0 times in Scopus0 0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2013) Effects of growth rate on InP nanowires morphology and crystal structure. Journal of Crystal Growth, 383 100-105. doi:10.1016/j.jcrysgro.2013.08.014 66   2 Cited 1 times in Scopus1 0
Gao, Q., Joyce, H. J., Paiman, S., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. In: 2009 14th Optoelectronics and Communications Conference. 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, (). 13-17 July 2009. doi:10.1109/OECC.2009.5219756 20   Cited 0 times in Scopus0 0
Paiman, S., Gao, Q., Joyce, H. J., Kim, Y., Tan, H. H., Jagadish, C., Zhang, X., Guo, Y. and Zou, J. (2010) Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires. Journal of Physics D: Applied Physics, 43 44: 445402-1-445402-6. doi:10.1088/0022-3727/43/44/445402 94   17 Cited 16 times in Scopus16 0
Joyce, H. J., Paiman, S., Gao, Q., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). III-V compound semiconductor nanowires. In: IEEE Nanotechnology Materials and Devices Conference, 2009. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI United States, (59-60). 2-5 June 2009. doi:10.1109/NMDC.2009.5167572 19   0 Cited 1 times in Scopus1 0
Gao, Q., Joyce, H. J., Paiman, S., Kang, J. H., Tan, H. H., Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zou, J. and Jagadish, C. (2011) III-V compound semiconductor nanowires for optoelectronic device applications. International Journal of High Speed Electronics and Systems, 20 1: 131-141. doi:10.1142/S0129156411006465 39   Cited 0 times in Scopus0 0
Ramesh, V., Gao, Q., Tan, H. H., Paiman, S., Guo, Y. N., Zou, J. and Jagadish, C. (2010). InP/InGaAs core-shell nanowire heterostructures: Growth and characterisation. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (83-84). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699792 105   Cited 0 times in Scopus0 0
Gao, Q., Joyce, H.J., Paiman, S., Kang, J.H., Tan, H.H., Kim, Y., Smith, L.M., Jackson, H.E., Yarrison-Rice, J.M., Zhang, X., Zou, Jin and Jagadish, C. (2009) Nanowires for optoelectronic device applications. Physica Status Solidi (C), 6 12: 2678-2682. doi:10.1002/pssc.200982528 128   1 Cited 1 times in Scopus1 0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zhang, X. and Zou, J. (2009) The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires. Nanotechnology, 20 22: 225606.1-225606.7. doi:10.1088/0957-4484/20/22/225606 94   55 Cited 45 times in Scopus45 0