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Yuan, X. L., Zhang, B. P., Niitsuma, J. and Sekiguchi, T. (2006). Cathodoluminescence characterization of ZnO nanotubes grown by MOCVD on sapphire substrate. In: Materials Science in Semiconductor Processing: 11th Conference on Defects Recognition Imaging and Physics in Semiconductors. 11th International Conference on Defects: Recognition Imaging and Physics in Semiconductors (DRIP-XI), Beijing, China, (146-150). 13-19 September 2006. doi:10.1016/j.mssp.2006.01.037 94   23 Cited 25 times in Scopus25 0
Yuan, X. L., Niitsuma, J., Sekiguchi, T., Takase, M. and Taniguchi, T. (2005). Characterization of p-n junction formed at the boundary of facets in cubic-BN using scanning electron microscope. In: N. Fujimori, S. Yamasaki, K. Kobashi, H. Kawarada and N. Ohtake, Diamond and Related Materials: Proceedings of the 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999). 10th International Conference on New Diamond Science and Technology (ICNDST-10) - ICNDST-10, Tsukuba, Japan, (1955-1959). 11-14 May, 2005. doi:10.1016/j.diamond.2005.08.011 45   1 Cited 1 times in Scopus1 0
Niitsuma, J., Sekiguchi, T., Yuan, X.-L. and Awano, Y. (2007) Electron beam nanoprocessing of a carbon nanotube film using a variable pressure scanning electron microscope. Journal of Nanoscience And Nanotechnology, 7 7: 2356-2360. doi:10.1166/jnn.2007.420 36   0 Cited 2 times in Scopus2 0
Yuan, X. L., Sekiguchi, T., Niitsuma, J., Sakuma, Y., Ito, S. and Ri, S. G. (2005) Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2. Applied Physics Letters, 86 16: 162102-1-162102-3. doi:10.1063/1.1905802 86   6 Cited 6 times in Scopus6 0