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Liao, X. Z., Zou, J., Cockayne, D. J. H. and Matsumura, S. (2004) [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday. Ultramicroscopy, 98 2-4: 239-247. doi:10.1016/j.ultramic.2003.08.017 117   2 Cited 2 times in Scopus2 0
Liao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002) Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 15: 153306 - 1-153306 - 4. doi:10.1103/PhysRevB.65.153306 71   51 Cited 51 times in Scopus51 0
Zou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002) Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 11: 1996-1998. doi:10.1063/1.1506414 99   22 Cited 20 times in Scopus20 0
Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2000). Composition distribution in Ge(Si) islands grown on Si (001) substrate. In: Proceedings of the COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, (129). 11-13 December, 2000. 41  
Liao, X. Z., Zou, J. and Cockayne, David J. H. (2002). Composition distributions in Ge(Si)/Si(001) quantum dots. In: 15th International Congress on Electron Microscopy (ICEM), Durban, South Africa, (81-82). 1-6 September, 2002. 42  
Chen, Z. B., Lei, W., Chen, B., Wang, Y. B., Liao, X. Z., Tan, H. H., Zou, J., Ringer, S. P. and Jagadish, C. (2014) Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition. Applied Physics Letters, 104 2: 022108.1-022108.5. doi:10.1063/1.4859915 51   0 Cited 0 times in Scopus0 0
Chen, Z. B., Lei, W., Chen, B., Wang, Y. B., Liao, X. Z., Tan, H. H., Zou, J., Ringer, S. P. and Jagadish, C. (2013) Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy. Scripta Materialia, 69 8: 638-641. doi:10.1016/j.scriptamat.2013.07.020 62   2 Cited 2 times in Scopus2 0
Sun W., Huang Y., Guo Y., Liao Z.M., Gao Q., Tan H.H., Jagadish C., Liao X.Z. and Zou J. (2015) Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity. Journal of Materials Chemistry C, 3 8: 1745-1750. doi:10.1039/c4tc02305f 16   Cited 0 times in Scopus0 0
Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2003). Strain relaxation in epitaxial self-assembled Ge(Si)/Si islands. In: Proceedings of International Beijing Conference and Exhibition on Instrumental Analysis. nternational Beijing Conference and Exhibition on Instrumental Analysis, Beijing, China, (A23-A24). 13 - 16 October, 2003. 93  
Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2002). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. In: ICEM-15 : proceedings of the 15th International Congress on Electron Microscopy. 15th International Congress on Electron Microscopy, Durban, South Africa, (47-48). 1-6 September 2002. 36  
Zou, J., Liao, X. Z., Cockayne, D.J.H. and Jiang, Z. M. (2003). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. In: Proceedings of the 8th International Conference on Electronic Materials, IUMRS-ICEM 2002. Advanced Nanomaterials and Nanodevices, China, (234-250). 10 - 14 June, 2002. 56  
Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2003). TEM investigations of the compositions in Ge(Si)/Si(001) quantum dots. In: Microscopy and Microanalysis: Proceedings of the VII InterAmerican Congress on Electron Microscopy. VII InterAmerican Congress on Electron Microscopy, San Antonio, Texas, (426-427). 3 - 7 August, 2003. 54   Cited 0 times in Scopus0
Zou, J. and Liao, X. Z. (2003). Transmission electron microscopy investigation of semi conductor quantum dots. In Hengqiang Ye and Yuanming Wang (Ed.), 透射电子显微学进展 (pp. 552-574) Bejing, China: Science Press. 84  
Liao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998) Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 8: R4235-R4237. doi:10.1103/PhysRevB.58.R4235 53   47 Cited 71 times in Scopus71 0