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Liao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002) Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 15: 153306 - 1-153306 - 4. doi:10.1103/PhysRevB.65.153306 67   50 Cited 50 times in Scopus50 0
Zou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002) Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 11: 1996-1998. doi:10.1063/1.1506414 96   22 Cited 19 times in Scopus19 0
Li, F. H., Fan, Y. L., Yang, X. J., Jiang, Z. M., Wu, Q. and Zou, J. (2006) Atomic composition profile change of SiGe islands during Si capping. Applied Physics Letters, 89 10: 103108-1-103108-3. doi:10.1063/1.2345589 66   13 Cited 12 times in Scopus12 0
Shao, Y. M., Nie, T. X., Jiang, Z. M. and Zou, J. (2012) Behavior of Au-Si droplets in Si(001) at high temperatures. Applied Physics Letters, 101 5: 053104.1-053104.3. doi:10.1063/1.4739413 43   5 Cited 8 times in Scopus8 0
Jiang, Z. M., Li, F. H., Lin, J. H., Wu, R., Wu, Y. Q. and Zou, J. (2007). Faceted SiGe quantum dots and their stabilities. In: Proceedings of the Material Today Asia, 2007. Materials Today Asia, 2007, Beijing, China, (x-x). 3 - 5 September, 2007. 45  
Ma, Y. J., Zhong, Z., Lv, Q., Zhou, T., Yang, X. J., Fan, Y. L., Wu, Y. Q., Zou, J. and Jiang, Z. M. (2012) Formation of coupled three-dimensional GeSi quantum dot crystals. Applied Physics Letters, 100 15: 153113.1-153113.4. doi:10.1063/1.3702883 76   10 Cited 6 times in Scopus6 0
Lin, J. H., Wu, Y. Q., Cui, J., Fan, Y. L., Yang, X. J., Jiang, Z. M., Chen, Y. and Zou, J. (2009) Formation of planar defects over GeSi islands in Si capping layer grown at low temperature. Journal of Applied Physics, 105 2: 024307.1-024307.4. doi:10.1063/1.3068192 63   8 Cited 7 times in Scopus7 0
Zhu, Y. Y., Fang, Z. B., Chen, S., Liao, C., Wu, Y. Q., Fan, Y. L. and Jiang, Z. M. (2007) Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures. Applied Physics Letters, 91 12: 122914-1-122914-3. doi:10.1063/1.2787896 79   8 Cited 9 times in Scopus9 0
Qin, J., Li, F. H., Wu, Y. Q., Yang, H. B., Fan, Y. L. and Jiang, Z. M. (2007) Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealing. Surface Science, 601 4: 941-944. doi:10.1016/j.susc.2006.11.034 43   9 Cited 8 times in Scopus8 0
Wu, Y. Q., Li, F. H., Cui, J., Wu, R., Qin, J., Zhu, C. Y., Fan, Y. L., Yang, X. J. and Jiang, Z. M. (2005) Shape change of SiGe islands with initial Si capping. Applied Physics Letters, 87 22: 223116-1-223116-3. doi:10.1063/1.2137307 48   22 Cited 21 times in Scopus21 0
Zou, J., Liao, X. Z., Cockayne, D.J.H. and Jiang, Z. M. (2003). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. In: Proceedings of the 8th International Conference on Electronic Materials, IUMRS-ICEM 2002. Advanced Nanomaterials and Nanodevices, China, (234-250). 10 - 14 June, 2002. 55  
Fang, Z. B., Zhu, Y. Y., Wu, Y. Q., Fan, Y. L., Wang, Y. Y. and Jiang, Z. M. (2007) Structural and electrical characterization of ultrathin Er2O3 films grown on Si(001) by reactive evaporation. Nanotechnology, 18 15: . doi:10.1088/0957-4484/18/15/155205 43   7 Cited 6 times in Scopus6 0
Zhu, C. Y., Wu, R., Wu, Y. Q., Fan, Y. L., Jiang, Z. M. and Yang, X. J. (2007) The influence of double-layer charge interaction on charge injection and charge decay in Si nanocrystals. Nanotechnology, 18 23: . doi:10.1088/0957-4484/18/23/235403 50   3 Cited 2 times in Scopus2 0
Wu, Y. Q., Zou, J., LI, F. H., Lin, J. H., Wu, R. W. and Jiang, Z. M. (2006). The stability of faceted SiGe quantum dotes capped with a Si thin layer. In: 16th International Microscopy Congress. 16th International Microscopy Congress, Sapporo, Japan, (1337). 3-8 September, 2006. 54