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Chou, C. T., Cockayne, D. J. H., Zou, J., Kringhøj, P. and Jagadish, C (1997). {111} and {311} rod-like defects in silicon ion implanted silicon. In: Proceedings: 1996 Conference On Optoelectronic and Microelectronic Materials and Devices. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, (305-308). 8-11 December 1996. doi:10.1109/COMMAD.1996.610131 44   0 Cited 0 times in Scopus0 0
Chou, C. T., Cockayne, D. J. H., Zou, J., Kringhoj, P. and Jagadish, C. (1995) {111} defects in 1-MeV-silicon-ion-implanted silicon. Physical Review B, 52 24: 17223-17230. doi:10.1103/PhysRevB.52.17223 54   21 Cited 18 times in Scopus18 0
Yuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998) Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 3: 1305-1311. doi:10.1063/1.366830 78   42 0
Liu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C and Zou, J (2001) Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures. Journal of Nanoscience And Nanotechnology, 1 4: 389-392. doi:10.1166/jnn.2001.064 78   4 0
Zou, J., Paladugu, M., Auchterlonie, G. J., Guo, Y. N., Kim, Y. and Jagadish, C. (2007). Asymmetrical lateral growth of GaAs nanowires. In: Materials Today Asia 2007, Beijing, (Poster No. 2.15). 2007. 52  
Paiman, S., Gao, Q., Joyce, H.J., Tan, H.H., Jagadish, C., Kim, Y., Guo, Y. and Zou, J. (2010). Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (37-38). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699767 78   Cited 0 times in Scopus0 0
Kucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2002) Blistering of H-implanted GaN. Journal of Applied Physics, 91 6: 3928-3930. doi:10.1063/1.1430533 42   23 Cited 27 times in Scopus27 0
Pemasiri, K, Montazeri, M, Gass, R, Smith, LM, Jackson, HE, Yarrison-Rice, J, Paiman, S, Gao, Q, Tan, HH, Jagadish, C, Zhang, X and Zou, J (2009) Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures. NANO LETTERS, 9 2: 648-654. doi:10.1021/nl802997p 87   100 Cited 108 times in Scopus108 0
Lu, W, Liu, XQ, Li, ZF, Shen, SC, Zhao, QX, Fu, Y, Willander, M, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001) Carrier transfer between V-grooved quantum wire and vertical quantum well. Physics Letters A, 280 1-2: 77-80. doi:10.1016/S0375-9601(01)00022-6 59   1 Cited 1 times in Scopus1 0
Paladugu, Mochanchand, Zou, Jin, Guo, Ya-Nan, Zhang, Xin, Joyce, Hannah J., Gao, Qiang, Tan, H. Hoe, Jagadish, C. and Kim, Yong (2009) Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures. Journal of Applied Physics, 105 7: 073503.1-073503.4. doi:10.1063/1.3103265 93   10 Cited 9 times in Scopus9 0
Kucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000) Damage buildup in GaN under ion bombardment. Physical Review B, 62 11: 7510-7522. doi:10.1103/PhysRevB.62.7510 32   117 Cited 120 times in Scopus120 0
Coleman, Victoria Anne, Tan, Hark Hoe, Bradby, Jodie E., Buda, Manuela, Jagadish, C., Kucheyev, Sergei O., Zou, Jin and Phillips, Matthew R. (2007). Defect Engineering in ZnO. In: Proceedings of the 2006 Fall Meeting: Symposium K: Zinc Oxide and Related Materials. Symposium K: Zinc Oxide and Related Materials, Boston, MA, (x-x). 27 Nov - 1 Dec, 2007. 91  
Kucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001) Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures. Applied Physics Letters, 78 10: 1373-1375. doi:10.1063/1.1347010 50   24 Cited 28 times in Scopus28 0
Kucheyev, S. O., Williams, J. S., Jagadish, C. and Zou, J. (2003). Dynamic annealing in group-III nitrides under ion irradiation. In: Proceedings of the 2003 Fall Meeting: Symposium R: Radiation Effects and Ion Beam Processing of Materials. Symposium R:Radiation Effects and Ion Beam Processing of Materials, Boston, MA, (x-x). 1 - 5 December, 2003. 42  
Kucheyev, SO, Williams, JS, Zou, J and Jagadish, C (2004) Dynamic annealing in III-nitrides under ion bombardment. Journal of Applied Physics, 95 6: 3048-3054. doi:10.1063/1.1649459 60   27 Cited 26 times in Scopus26 0
Titova, L.V., Hoang, T.B., Yarrison-Rice, J.M., Jackson, H.E., Kim, Y., Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C., Zhang, X., Zou, J. and Smith, LM (2007) Dynamics of strongly degenerate electron-hole Plasmas and excitons in single InP nanowires. Nano Letters, 7 11: 3383-3387. doi:10.1021/nl071733l 128   31 Cited 34 times in Scopus34 0
Guo, Y., Zou, J., Joyce, H. J., Gao, Q., Tan, H. H. and Jagadish, C. (2010). Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (51-52). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699774 76 1 Cited 0 times in Scopus0 0
Kucheyev, SO, Williams, JS, Zou, J, Li, G, Jagadish, C and Titov, AI (2002) Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 190 1-4: 782-786. doi:10.1016/S0168-583X(01)01309-X 41   18 Cited 18 times in Scopus18 0
Kucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Li, G and Titov, AI (2001) Effect of ion species on the accumulation of ion-beam damage in GaN. Physical Review B, 6403 3: art. no.-035202. doi:10.1103/PhysRevB.64.035202 80   60 0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zhang, X. and Zou, J. (2009). Effect of the crystal structure on the optical properties of InP nanowires. In: IEEE LEOS annual meeting conference proceedings, 2009. 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, (145-146). 4-8 October 2009. doi:10.1109/LEOS.2009.5343092 32   0 Cited 0 times in Scopus0 0
Xu, H. Y., Guo, Y. N., Wang, Y., Zou, J., Kang, J. H., Gao, Q., Tan, H. H. and Jagadish, C. (2009) Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si. Journal of Applied Physics, 106 8: 083514-1-083514-4. doi:10.1063/1.3248372 132   7 Cited 8 times in Scopus8 0
Kim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M. B., Kalceff, M. A. S., Zou, J. and Cockayne, D. J. H. (1996) Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate. Journal of Applied Physics, 80 9: 5014-5020. doi:10.1063/1.363546 41   21 Cited 19 times in Scopus19 0
Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2013) Effects of growth rate on InP nanowires morphology and crystal structure. Journal of Crystal Growth, 383 100-105. doi:10.1016/j.jcrysgro.2013.08.014 80   2 Cited 1 times in Scopus1 0
Gao, Q, Tan, HH, Sun, BQ, Gal, M, Ouyang, L, Zou, J and Jagadish, C (2004). Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures. In: SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials. 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII), Beijing Peoples R China, (194-197). Sep 20-25, 2004. 23   0
Gao, Q., Tan. H. H., Sun, B. Q., Gal, M., Ouyang, L., Zou, J. and Jagadish, C. (2005). Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures. In: Proceedings of the13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004.. Semiconducting and Insulating Materials, Beijing, China, (194-197). 20 - 25 September, 2004. doi:10.1109/SIM.2005.1511416 43   0
Chen, Z. B., Lei, W., Chen, B., Wang, Y. B., Liao, X. Z., Tan, H. H., Zou, J., Ringer, S. P. and Jagadish, C. (2014) Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition. Applied Physics Letters, 104 2: 022108.1-022108.5. doi:10.1063/1.4859915 57   0 Cited 0 times in Scopus0 0
Gao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L and Zou, J (2004) Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers. Applied Physics Letters, 84 14: 2536-2538. doi:10.1063/1.1697628 62   2 Cited 2 times in Scopus2 0
Sun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, Ouyang, L and Zou, J (2003) Epitaxially grown GaAsN random laser. Journal of Applied Physics, 93 10: 5855-5858. doi:10.1063/1.1568533 36   9 Cited 9 times in Scopus9 0
Gao, Q., Joyce, H. J., Paiman, S., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. In: 2009 14th Optoelectronics and Communications Conference. 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, (). 13-17 July 2009. doi:10.1109/OECC.2009.5219756 24   Cited 0 times in Scopus0 0
Zhang, X, Zou, J, Paladugu, M, Guo, YA, Wang, Y, Kim, Y., Joyce, H.J., Gao, Q., Tan, H.H. and Jagadish, C. (2009) Evolution of Epitaxial InAs Nanowires on GaAs (111)B. SMALL, 5 3: 366-369. doi:10.1002/smll.200800690 63   18 Cited 19 times in Scopus19 0
Paladugu, M., Zou, J., Auchterlonie, G. J., Guo, Y. N., Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H. and Jagadish, C. (2007) Evolution of InAs branches in InAs/GaAs nanowire heterostructures. Applied Physics Letters, 91 13: 133115.1-133115.3. doi:10.1063/1.2790486 132   25 Cited 24 times in Scopus24 0
Paladugu, M., Zou, J., Guo, Y.N., Zhang, X, Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C. and Kim, Y. (2009) Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores. NANOSCALE RESEARCH LETTERS, 4 8: 846-849. doi:10.1007/s11671-009-9326-6 74   12 Cited 12 times in Scopus12 0
Paladugu, M., Zou, J., Guo, Y.-N., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth. In: T. S. Mayer, 2007 MRS Fall Meeting - Symposium JJ – Nanowires–Novel Assembly Concepts and Device Integration. Proceedings. 2007 MRS Fall Meeting, Boston, MA, USA, (1-7). 26-30 November, 2007. doi:10.1557/PROC-1058-JJ01-09 21   Cited 0 times in Scopus0 0
Paladugu, M., Zou, J., Guo, Y.N., Zhang, X, Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C. and Kim, Y. (2009) Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 48 4: 780-783. doi:10.1002/anie.200804630 74   25 Cited 25 times in Scopus25 0
Gao, Q., Kim, Y., Tan, H. H., Jagadish, C., Wang, H., Guo, Y. N. and Zou, J. (2006). GaSb/GaAs nanowire heterostructures grown on GaAs by metalorganic chemical vapor deposition. In: COMMAD 2006, WO-B2. COMMAD 2006, WO-B2, xx, (1). xx. 52  
Gao, Q., Tan, H. H., Jagadish, C., Sun, B. Q., Gal, M., Ouyang, L. and Zou, J. (2002). Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure. In: Gal, Michael, Proceedings of the 2002 Conference on Optoelectronic and Microelecttronic Materials and Devices. Optoelectronic and Microelecttronic Materials and Devices, University of Sydney, NSW, Australia, (247-250). 11 - 13 December, 2002. 72  
Gao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J., Johnston, M. and Jagadish, C. (2011). Growth and characterization of III-V compound semiconductor nanowires. In: 16th Opto-Electronics and Communications Conference (OECC), 2011. 16th Opto-Electronics and Communications Conference, OECC 2011, Kaohsiung, Taiwan, (366-367). 4-8 July 2011. 34 1 Cited 0 times in Scopus0
Gao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, Jin and Jagadish, C. (2011) Growth and properties of III-V compound semiconductor heterostructure nanowires. Semiconductor Science and Technology, 26 1: . doi:10.1088/0268-1242/26/1/014035 51   16 Cited 10 times in Scopus10 0
Gao, Q., Tan, H. H.., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J. and Jagadish, C. (2012) Growth and properties of III-V compound semiconductor heterostructure nanowires (vol 26, 014035, 2011). Semiconductor Science and Technology, 27 5: . doi:10.1088/0268-1242/27/5/059501 81   0 Cited 0 times in Scopus0 0
Zou, J., Paladugu, M., Guo, Y. N., Zhang, X., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Growth behavior of epitaxial semiconductor axial nanowire heterostructures. In: Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008, Sydney, Australia, (71-74). 28 July-1 September 2008. doi:10.1109/COMMAD.2008.4802094 59   0 Cited 0 times in Scopus0 0
Zou, J., Wang, H., Auchterlonie, G. J., Paladugu, M., Gao, Y. N., Kim, Y., Joyce, H. J., Tan, H. and Jagadish, C. (2006). Growth mechanism of truncated triangular GaAs nanowires. In: C. Jagadish and M. Lu, International Conference on Nanoscience and Nanotechnology, 2006. ICONN '06.. 2006 International Conference on Nanosciences and Nanotechnology (ICONN '06), Brisbane, Australia, (604-605). 3 - 7 July 2006. doi:10.1109/ICONN.2006.340690 76   0 Cited 0 times in Scopus0 0
Xu, H. Y., Guo, Y. N., Liao, Z. M., Zou, J., Gao, Q., Tan, H. H. and Jagadish, C. (2012). Growth of defect-free InAs Nanowires using Pd catalyst. In: COMMAD 2012 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, (31-32). 12-14 December 2012. doi:10.1109/COMMAD.2012.6472345 24   1 Cited 0 times in Scopus0 0
Xu, H.Y., Wang, Y., Guo, Y.N., Zou, J., Gao, Q., Tan, H.H. and Jagadish, C. (2010). Growth of GaAs nanowires using different Au catalysts. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (35-36). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699766 69 1 Cited 0 times in Scopus0 0
Paiman, S., Gao, Q., Joyce, H. J., Kim, Y., Tan, H. H., Jagadish, C., Zhang, X., Guo, Y. and Zou, J. (2010) Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires. Journal of Physics D: Applied Physics, 43 44: 445402-1-445402-6. doi:10.1088/0022-3727/43/44/445402 105   22 Cited 22 times in Scopus22 0
Kucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001) High-dose ion implantation into GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175 214-218. doi:10.1016/S0168-583X(00)00672-8 46   12 Cited 12 times in Scopus12 0
Joyce, H.J., Gao, Q., Tan, H.H., Jagadish, C., Kim, Y., Fickenscher, M.A., Perera, S., Hoang, T.B., Smith, L.M., Jackson, H.E., Yarrison-Rice, J.M., Zhang, X. and Zou, J. (2008) High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization. Advanced Functional Materials, 18 23: 3794-3800. doi:10.1002/adfm.200800625 44   47 Cited 54 times in Scopus54 0
Zou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2000). HREM investigation of planar defects in ion-implanted GaN. In: Proceedings of the COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, (8). 11-13 December, 2000. 38  
Joyce, H. J., Paiman, S., Gao, Q., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). III-V compound semiconductor nanowires. In: IEEE Nanotechnology Materials and Devices Conference, 2009. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI United States, (59-60). 2-5 June 2009. doi:10.1109/NMDC.2009.5167572 22   0 Cited 1 times in Scopus1 0
Gao, Q., Joyce, H. J., Paiman, S., Kang, J. H., Tan, H. H., Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zou, J. and Jagadish, C. (2011) III-V compound semiconductor nanowires for optoelectronic device applications. International Journal of High Speed Electronics and Systems, 20 1: 131-141. doi:10.1142/S0129156411006465 45   Cited 0 times in Scopus0 0
Kim, Y., Gao, Q., Joyce, H. J., Tan, H. H., Jagadish, C., Paladugu, M. and Zou, J. (2006). III-V nanowires for optoelectronics. In: Y H Lee, F Koyama and Y Luo, Proceedings of SPIE. Proceedings of SPIE, xx, (635226). 2006. 39  

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