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Yuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998) Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 3: 1305-1311. doi:10.1063/1.366830 78   42 0
Lobo, C, Perret, N, Morris, D, Zou, J, Cockayne, DJH, Johnston, MB, Gal, M and Leon, R (2000) Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots. Physical Review B, 62 4: 2737-2742. doi:10.1103/PhysRevB.62.2737 33   15 0
Kim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M. B., Kalceff, M. A. S., Zou, J. and Cockayne, D. J. H. (1996) Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate. Journal of Applied Physics, 80 9: 5014-5020. doi:10.1063/1.363546 40   21 Cited 19 times in Scopus19 0
Leon, R., Kim, Y., Gal, M., Zou, J. and Cockayne, D. J. H. (1996) Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots. Applied Physics Letters, 69 13: 1888-1890. doi:10.1063/1.117467 39   240 Cited 222 times in Scopus222 0
Gao, Q, Tan, HH, Sun, BQ, Gal, M, Ouyang, L, Zou, J and Jagadish, C (2004). Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures. In: SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials. 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII), Beijing Peoples R China, (194-197). Sep 20-25, 2004. 21   0
Gao, Q., Tan. H. H., Sun, B. Q., Gal, M., Ouyang, L., Zou, J. and Jagadish, C. (2005). Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures. In: Proceedings of the13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004.. Semiconducting and Insulating Materials, Beijing, China, (194-197). 20 - 25 September, 2004. doi:10.1109/SIM.2005.1511416 41   0
Gao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L and Zou, J (2004) Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers. Applied Physics Letters, 84 14: 2536-2538. doi:10.1063/1.1697628 62   2 Cited 2 times in Scopus2 0
Sun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, Ouyang, L and Zou, J (2003) Epitaxially grown GaAsN random laser. Journal of Applied Physics, 93 10: 5855-5858. doi:10.1063/1.1568533 34   9 Cited 9 times in Scopus9 0
Gao, Q., Tan, H. H., Jagadish, C., Sun, B. Q., Gal, M., Ouyang, L. and Zou, J. (2002). Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure. In: Gal, Michael, Proceedings of the 2002 Conference on Optoelectronic and Microelecttronic Materials and Devices. Optoelectronic and Microelecttronic Materials and Devices, University of Sydney, NSW, Australia, (247-250). 11 - 13 December, 2002. 70  
Gao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L and Zou, J (2004) Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties. Journal of Crystal Growth, 264 1-3: 92-97. doi:10.1016/j.jcrysgro.2003.12.068 74   6 Cited 7 times in Scopus7 0
Fu, Y, Willander, M, Lu, W, Liu, XQ, Shen, SC, Jagadish, C, Gal, M, Zou, J and Cockayne, DJH (2000) Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire. Physical Review B, 61 12: 8306-8311. doi:10.1103/PhysRevB.61.8306 29   11 0
Carmody, C, Tan, HH, Jagadish, C, Douheret, O, Maknys, K, Anand, S, Zou, J, Dao, L and Gal, M (2004) Structural, electrical, and optical analysis of ion implanted semi-insulating InP. Journal of Applied Physics, 95 2: 477-482. doi:10.1063/1.1633349 32   1 Cited 1 times in Scopus1 0
Carmody, C., Tan, H. H., Jagadish, C., Zou, J., Dao, L. and Gal, M. (2002). Structural electrical and optical properties of MeV ion implanted InP. In: Gal, Michael, Proceedings of the 2002 Conference on Optoelectronic and Microelecttronic Materials and Devices. Optoelectronic and Microelecttronic Materials and Devices, Sydney, (487-490). 9 - 113 December, 2002. 38   0
Liu, XQ, Lu, W, Chen, XS, Shen, SC, Tan, HH, Yuan, S, Jagadish, C, Johnston, MB, Dao, LV, Gal, M, Zou, J and Cockayne, DJH (2000) Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing. Journal of Applied Physics, 87 3: 1566-1568. doi:10.1063/1.372051 34   3 0