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Liao, X. Z., Zou, J., Cockayne, D. J. H. and Matsumura, S. (2004) [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday. Ultramicroscopy, 98 2-4: 239-247. doi:10.1016/j.ultramic.2003.08.017 117   2 Cited 2 times in Scopus2 0
Chou, C. T., Cockayne, D. J. H., Zou, J., Kringhøj, P. and Jagadish, C (1997). {111} and {311} rod-like defects in silicon ion implanted silicon. In: Proceedings: 1996 Conference On Optoelectronic and Microelectronic Materials and Devices. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, (305-308). 8-11 December 1996. doi:10.1109/COMMAD.1996.610131 44   0 Cited 0 times in Scopus0 0
Chou, C. T., Cockayne, D. J. H., Zou, J., Kringhoj, P. and Jagadish, C. (1995) {111} defects in 1-MeV-silicon-ion-implanted silicon. Physical Review B, 52 24: 17223-17230. doi:10.1103/PhysRevB.52.17223 53   20 Cited 18 times in Scopus18 0
Zou, J, Liao, X, Keast, V J and Cockayne, D J H (2006). Advanced transmission electron microscopy characterization of semiconductor quantum structures. In A A Balandin and K L Wang (Ed.), Handbook of Semiconductor Nanostructures and Nanodevices. Volume 2 (pp. 61-92) USA: American Scientific Publishers. 64  
Liao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002) Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 15: 153306 - 1-153306 - 4. doi:10.1103/PhysRevB.65.153306 71   51 Cited 51 times in Scopus51 0
Zou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002) Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 11: 1996-1998. doi:10.1063/1.1506414 99   22 Cited 20 times in Scopus20 0
Jiang, S. S., Zou, J., Cockayne, D. J. H., Sikorski, A., Hu, A and Peng, R. W. (1992) An electron diffraction and microscopy investigation of quasi-periodic Ta-Al superlattices. Philosophical Magazine B, 66 2: 229-237. doi:10.1080/13642819208224586 40   15 0
Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998) Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 10: 1190-1192. doi:10.1063/1.121030 62   64 Cited 70 times in Scopus70 0
Yuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998) Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 3: 1305-1311. doi:10.1063/1.366830 78   42 0
Russellharriott, J. J., Zou, J., Cockayne, D. J. H., Moon, A. R. and Usher, B. F. (1997). Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs. In: 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, (138-141). 8-11 December 1996. doi:10.1109/COMMAD.1996.610091 33   0 0
Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2000). Composition distribution in Ge(Si) islands grown on Si (001) substrate. In: Proceedings of the COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, (129). 11-13 December, 2000. 41  
Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996) Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 16: 2364-2366. doi:10.1063/1.117526 25   91 Cited 101 times in Scopus101 0
Kim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M. B., Kalceff, M. A. S., Zou, J. and Cockayne, D. J. H. (1996) Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate. Journal of Applied Physics, 80 9: 5014-5020. doi:10.1063/1.363546 40   21 Cited 19 times in Scopus19 0
Leon, R., Kim, Y., Gal, M., Zou, J. and Cockayne, D. J. H. (1996) Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots. Applied Physics Letters, 69 13: 1888-1890. doi:10.1063/1.117467 39   240 Cited 222 times in Scopus222 0
Zou, J. and Cockayne, D. J. H. (1993) Equilibrium dissociation configuration of misfit dislocations in low strained In0.1Ga0.9As/GaAs single heterostructures. Applied Physics Letters, 63 16: 2222-2224. doi:10.1063/1.110533 32   14 Cited 10 times in Scopus10 0
Zou, J. and Cockayne, D. J. H. (1994) Glide of misfit dislocations through multi-layer heterostructures. Physica Status Solidi A-applied Research, 145 1: 133-143. doi:10.1002/pssa.2211450112 38   4 Cited 2 times in Scopus2 0
Cockayne, D. J. H., Moon, A. R., Russell-Harriott, J. J. and Zou, J. (1997) Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy. Micron, 28 4: 309-312. doi:10.1016/S0968-4328(97)00027-9 26   2 Cited 1 times in Scopus1 0
Russell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998) Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 26: 3899-3901. doi:10.1063/1.122929 33   8 Cited 7 times in Scopus7 0
Tan, H. H., Jagadish, C., Williams, J. S., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1995) Ion damage buildup and amorphization processes in AlxGa1-xAs. Journal of Applied Physics, 77 1: 87-94. doi:10.1063/1.359358 39   52 Cited 49 times in Scopus49 0
Zou, J. and Cockayne, D. J. H. (1996) Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 69 8: 1083-1085. doi:10.1063/1.117065 41   9 Cited 9 times in Scopus9 0
Zou, J. and Cockayne, D. J. H. (1994) Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures. Physical Review B, 49 12: 8086-8095. doi:10.1103/PhysRevB.49.8086 95   5 Cited 6 times in Scopus6 0
Zou, J. and Cockayne, D. J. H. (1995). Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructures. In: B.C. Muddle, Interfaces II : Proceedings of the Second International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance. 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance, Ballarat, Australia, (279-284). 1-5 November 1993. 48   2 Cited 0 times in Scopus0
Zou, J., Cockayne, D. J. H. and Russell-Harriott, J. J. (1997) Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 70 23: 3134-3136. doi:10.1063/1.119112 26   13 Cited 11 times in Scopus11 0
Cockayne, D. J. H. and Zou, J. (1997). Misfit dislocations nucleated from the surface in strained-layer heterostructures. In: C. Jagadish, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices : proceedings. Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD 96, Canberra, Australia, (297-300). 8-11 December 1996. doi:10.1109/COMMAD.1996.610129 37   0 0
Yuan, S., Kim, Y., Jagadish, C., Burke, P. T., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1997) Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing. Applied Physics Letters, 70 10: 1269-1271. doi:10.1063/1.118549 34   37 Cited 34 times in Scopus34 0
Cockayne, D. J. H. and Zou, J. (1996) Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructures. Journal of Applied Physics, 79 10: 7632-7635. doi:10.1063/1.361527 33   18 Cited 19 times in Scopus19 0
Russell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Oval defects in InGaAs/GaAs heterostructures. In: Electron Microscopy. 14th International Congress on Electron Microscopy, Cancun, Mexico, (483-484). 31 August - 4 September 1998. 31   0
Jiang, S. S., Zou, J., Cockayne, D. J. H., Hu, A. and Sikorski, A. (1994) Precise determination of the periodicity for Mo/Si and W/C metallic multilayers by electron and x‐ray diffraction. Journal of Applied Physics, 77 1: 167-173. doi:10.1063/1.359363 33   3 Cited 3 times in Scopus3 0
Leon, R., Lobo, C., Zou, J. and Cockayne, D. J. H. (1998) Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation. Physical Review Letters, 81 12: 2486-2489. doi:10.1103/PhysRevLett.81.2486 27   48 Cited 49 times in Scopus49 0
Glasko, J. M., Zou, J., Cockayne, D. J. H. and Fitz Gerald, J. D. (1998) Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature. Applied Physics Letters, 73 6: 838-840. doi:10.1063/1.122018 30   6 Cited 6 times in Scopus6 0
Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2003). Strain relaxation in epitaxial self-assembled Ge(Si)/Si islands. In: Proceedings of International Beijing Conference and Exhibition on Instrumental Analysis. nternational Beijing Conference and Exhibition on Instrumental Analysis, Beijing, China, (A23-A24). 13 - 16 October, 2003. 93  
Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2002). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. In: ICEM-15 : proceedings of the 15th International Congress on Electron Microscopy. 15th International Congress on Electron Microscopy, Durban, South Africa, (47-48). 1-6 September 2002. 36  
Zou, J., Liao, X. Z., Cockayne, D.J.H. and Jiang, Z. M. (2003). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. In: Proceedings of the 8th International Conference on Electronic Materials, IUMRS-ICEM 2002. Advanced Nanomaterials and Nanodevices, China, (234-250). 10 - 14 June, 2002. 56  
Zou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. In: Hector A. Calderon Benavides and M. Jose Yacaman, Electron microscopy 1998 : proceedings of the 14th International Congress on Electron Microscopy. 14th International Congress on Electron Microscopy, Cancún, Mexico, (481-482). 31 August-4 September 1998. 57   0
Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2003). TEM investigations of the compositions in Ge(Si)/Si(001) quantum dots. In: Microscopy and Microanalysis: Proceedings of the VII InterAmerican Congress on Electron Microscopy. VII InterAmerican Congress on Electron Microscopy, San Antonio, Texas, (426-427). 3 - 7 August, 2003. 54   Cited 0 times in Scopus0
Zou, J., Cai, D. Q., Cockayne, D. J. H. and Jagadish, C. (1998). TEM study of compositional profile in AlGaAs/GaAs quantum wells. In: Electron microscopy, 1998 : proceedings of the 14th International Congress on Electron Microscopy. 14th International Congress on Electron Microscopy, Cancun Mexico, (417-418). 31 August - 4 September 1998. 50   0
Liao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998) Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 8: R4235-R4237. doi:10.1103/PhysRevB.58.R4235 53   47 Cited 71 times in Scopus71 0
Zou, J., Cockayne, D. J. H., Auchterlonie, G. J., McKenzie, D. R., Dou, S. X., Bourdillon, A. J., Sorrell, C. C., Easterling, K. E. and Johnson, A. W. S. (1988) Twin structures, transformation and symmetry of superconducting Y1Ba2Cu3O7-x, observed by transmission electron microscopy. Philosophical Magazine Letters, 57 3: 157-163. doi:10.1080/09500838808203765 46   12 Cited 4 times in Scopus4 0